Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Xinghuan Chen"'
Publikováno v:
Micromachines, Vol 15, Iss 3, p 330 (2024)
Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the
Externí odkaz:
https://doaj.org/article/0eca656ed7534843b86e1b918f8f93a0
Publikováno v:
Micromachines, Vol 14, Iss 11, p 2041 (2023)
The GaN industry always demands further improvement in the power transport capability of GaN-based high-energy mobility transistors (HEMT). This paper presents a novel enhancement-type GaN HEMT with high power transmission capability, which utilizes
Externí odkaz:
https://doaj.org/article/9732e7c504024c28814871eeea9bc9db
Autor:
Xiaoming Wang, Wanjun Chen, Ruize Sun, Chao Liu, Yun Xia, Yajie Xin, Xiaorui Xu, Fangzhou Wang, Xinghuan Chen, Yiqiang Chen, Bo Zhang
Publikováno v:
IEEE Transactions on Electron Devices. 69:5733-5741
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1ed5c35ac70509fd18a001dc02bad2f
https://doi.org/10.1109/ted.2022.3200928
https://doi.org/10.1109/ted.2022.3200928
Autor:
Chunpeng Wang, Di Yang, Shengji Wang, Xinghuan Chen, Yuanzhe Yao, Zhenwei Zhang, Jun Cao, Zirui Wang, Zeheng Wang
Publikováno v:
IEEE Transactions on Electron Devices. 66:1917-1923
A class of novel tunable light-emission-diode (LED)-compatible current regulator, including the reverse blocking and the reverse conducting device, is proposed by integrating the p-GaN cap with a voltage nanosensor on the AlGaN/GaN platform. Verified
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::798f918539cbbcc7b7692dee90f8568a
https://doi.org/10.1109/ted.2019.2899756
https://doi.org/10.1109/ted.2019.2899756
Publikováno v:
Applied Physics Letters. 119:133503
In this Letter, the degradation mechanism of Schottky p-type GaN (P-GaN) gate stack in GaN power devices under neutron irradiation is studied. After 1-MeV neutron irradiation at fluences of 6 × 1013 and 1 × 1014 neutron/cm2, device threshold voltag
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6171469270acbdaf1a9a27910b972e9
https://doi.org/10.1063/5.0065046
https://doi.org/10.1063/5.0065046
Publikováno v:
ICICDT
In this paper, we report a model to AlGaN/GaN power HEMT based on the artificial intelligence (AI) technology, wherein the model focuses on the subthreshold swing of the device. Verified by the modelling results, the proposed model matches the experi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85892d915dd0c2ef62ab48f0a6b000ab
https://doi.org/10.1109/icicdt.2019.8790946
https://doi.org/10.1109/icicdt.2019.8790946
Autor:
Xuewei Feng, Chao Chen, Chunpeng Wang, Di Yang, Jun Cao, Zirui Wang, Xinghuan Chen, Zeheng Wang, Shengji Wang, Yuanzhe Yao
Publikováno v:
2019 Electron Devices Technology and Manufacturing Conference (EDTM).
In this paper, we propose a novel high performance lateral AlGaN/GaN Schottky barrier diode realized by InGaN polarization enhanced channel and the highly effective field plate (HEFP). The InGaN channel, which exhibits larger lattice constant than th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55f72128f80deef56b4eb5a462420ea3
https://doi.org/10.1109/edtm.2019.8731288
https://doi.org/10.1109/edtm.2019.8731288
Publikováno v:
Applied Mathematics and Computation. 185:919-930
By a different use of relevance feedback (the order in which the relevant documents are retrieved, the terms of the relevant documents, and the terms of the irrelevant documents) in the design of fitness function, and by introducing three different g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1e874fb3799a3c7ec87593dbf912afb
https://doi.org/10.1016/j.amc.2006.07.044
https://doi.org/10.1016/j.amc.2006.07.044
Publikováno v:
Proceedings of the 11th Joint International Computer Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6469afc1e9ec05a6ed4586e32b13900
https://doi.org/10.1142/9789812701534_0119
https://doi.org/10.1142/9789812701534_0119
Publikováno v:
Lecture Notes in Computer Science ISBN: 9783540283201
ICNC (3)
ICNC (3)
In this paper, a different Web personalized service (PS) based on dual genetic algorithms (Dual GAs) has been presented. Firstly, to distinguish the importance of each keyword to a user, we have introduced a new concept called influence-gene and a us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bda5f6cb749eace0add853cd2a06609
https://doi.org/10.1007/11539902_7
https://doi.org/10.1007/11539902_7
