Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Xinge Tao"'
Publikováno v:
Endocrine Connections, Vol 13, Iss 2, Pp 1-8 (2024)
Objective: The aim of this study was to compare the differences in incident population, comorbidities, and glucose-lowering drug prescriptions between newly diagnosed patients with early-onset type 2 diabetes mellitus (T2DM) and those with late-onset
Externí odkaz:
https://doaj.org/article/b259d73648e7418582c5bdfea59bd31a
Autor:
Yan Han, Baiwei Lin, Wenjing Lu, Xu Wang, Wenshuai Tang, Xinge Tao, Han Cai, Chunmei He, Changqin Liu
Publikováno v:
Frontiers in Endocrinology, Vol 13 (2022)
ObjectivesPolycystic ovary syndrome (PCOS) is one of the most common endocrinopathy disorders in premenopausal women, which is characterized by hyperandrogenemia, anovulation, and polycystic ovarian morphology (PCOM). Time-restricted feeding (TRF) is
Externí odkaz:
https://doaj.org/article/1375e893dd7f4ce38d9f9a945728619e
Publikováno v:
Frontiers in Endocrinology, Vol 13 (2022)
Objectives(1) To establish the prevalence of sleep disorders in women with PCOS. (2) To establish the association between sleep disturbance and cardiovascular risk factors in women with PCOS.MethodsThe electronic databases PubMed and EMBASE were sear
Externí odkaz:
https://doaj.org/article/c0a7ccbee7574ae1b8e269334079c844
Publikováno v:
Nanomaterials, Vol 12, Iss 24, p 4352 (2022)
An effective way to reduce the power consumption of an integrated circuit is to introduce negative capacitance (NC) into the gate stack. Usually, negative-capacitance field-effect transistors (NCFETs) use both a negative-capacitance layer and a posit
Externí odkaz:
https://doaj.org/article/c67596b579e841fc8239ea4efb7f3346
Publikováno v:
IEEE Transactions on Electron Devices. 70:782-788
Publikováno v:
IEEE Transactions on Electron Devices. 70:796-800
Publikováno v:
TENCON 2022 - 2022 IEEE Region 10 Conference (TENCON).
Publikováno v:
Nanotechnology. 32(44)
The MoS
Publikováno v:
Nanotechnology. 32(19)
In this work, the ferroelectricity of hafnium zirconium oxide (Hf
Publikováno v:
Nanotechnology. 32:195202
In this work, the ferroelectricity of hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) is enhanced by fluorine (F)-plasma treatment, which is used to fabricate MoS2 negative-capacitance field-effect transistor. Measurements show that the subthreshold swin