Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Xingdan Sun"'
Autor:
Kaining Yang, Xiang Gao, Yaning Wang, Tongyao Zhang, Yuchen Gao, Xin Lu, Shihao Zhang, Jianpeng Liu, Pingfan Gu, Zhaoping Luo, Runjie Zheng, Shimin Cao, Hanwen Wang, Xingdan Sun, Kenji Watanabe, Takashi Taniguchi, Xiuyan Li, Jing Zhang, Xi Dai, Jian-Hao Chen, Yu Ye, Zheng Han
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract The realization of graphene gapped states with large on/off ratios over wide doping ranges remains challenging. Here, we investigate heterostructures based on Bernal-stacked bilayer graphene (BLG) atop few-layered CrOCl, exhibiting an over-1
Externí odkaz:
https://doaj.org/article/1746abe656db439894f13e3c00148316
Autor:
Xingdan Sun, Shihao Zhang, Zhiyong Liu, Honglei Zhu, Jinqiang Huang, Kai Yuan, Zhenhua Wang, Kenji Watanabe, Takashi Taniguchi, Xiaoxi Li, Mengjian Zhu, Jinhai Mao, Teng Yang, Jun Kang, Jianpeng Liu, Yu Ye, Zheng Vitto Han, Zhidong Zhang
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-8 (2021)
The alignment of three 2D nanosheets leads to the formation of super-moiré atomic lattices, which can influence the electronic properties of van der Waals structures. Here, the authors report evidence of possible correlated insulating states in doub
Externí odkaz:
https://doaj.org/article/4f42a71fb17f40e6b23a2542ca8cef05
Autor:
Linfeng Ai, Enze Zhang, Jinshan Yang, Xiaoyi Xie, Yunkun Yang, Zehao Jia, Yuda Zhang, Shanshan Liu, Zihan Li, Pengliang Leng, Xiangyu Cao, Xingdan Sun, Tongyao Zhang, Xufeng Kou, Zheng Han, Faxian Xiu, Shaoming Dong
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
The superconductor-ferromagnet interface provides a unique opportunity to study the interplay between superconductivity and ferromagnetism. Here, the authors build a van der Waals ferromagnetic Josephson junction evidencing a strong 0 and π phase Jo
Externí odkaz:
https://doaj.org/article/dae98c7948af44ae8ec963bb0ae17001
Autor:
Mao-Lin Chen, Xingdan Sun, Hang Liu, Hanwen Wang, Qianbing Zhu, Shasha Wang, Haifeng Du, Baojuan Dong, Jing Zhang, Yun Sun, Song Qiu, Thomas Alava, Song Liu, Dong-Ming Sun, Zheng Han
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
FinFETs are an evolution of metal-oxide-semiconductor field effect transistors (MOSFETs) featuring a semiconducting channel vertically wrapped by conformal gate electrodes. Here, the authors use a two-dimensional semiconductor to push the FinFET widt
Externí odkaz:
https://doaj.org/article/dfdb6dafbb0746b1aad4e7e31b106cba
Autor:
Yingjia Liu, Xingdan Sun
Publikováno v:
Magnetochemistry, Vol 8, Iss 9, p 101 (2022)
Transition metal phosphorous trichalcogenides (MPX3) have been extensively investigated as photodetectors due to their wide-bandgap semiconductor properties. However, the research involved in the photoresponses at low temperatures remain blank. Here,
Externí odkaz:
https://doaj.org/article/79e56516cd2a4692a54f5e966b65c930
Autor:
Hanwen Wang, Mao-Lin Chen, Mengjian Zhu, Yaning Wang, Baojuan Dong, Xingdan Sun, Xiaorong Zhang, Shimin Cao, Xiaoxi Li, Jianqi Huang, Lei Zhang, Weilai Liu, Dongming Sun, Yu Ye, Kepeng Song, Jianjian Wang, Yu Han, Teng Yang, Huaihong Guo, Chengbing Qin, Liantuan Xiao, Jing Zhang, Jianhao Chen, Zheng Han, Zhidong Zhang
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-8 (2019)
Some atomically thin crystals feature crystallographic anisotropy, but demonstrations of electrical anisotropy are scarce. Here, the authors show that the electrical conductivity of few-layered GaTe along the x and y directions can be widely gate tun
Externí odkaz:
https://doaj.org/article/2ee26f33fa694d728ee5f019e31c65bb
Publikováno v:
Crystals, Vol 10, Iss 3, p 144 (2020)
Recently, gallium telluride (GaTe) has triggered much attention for its unique properties and offers excellent opportunities for nanoelectronics. Yet it is a challenge to bridge the semiconducting few-layered GaTe crystals with metallic electrodes fo
Externí odkaz:
https://doaj.org/article/98f6672bc40c46a09a5927785cd45f72
Autor:
Jinshan Yang, Shanshan Liu, Enze Zhang, Pengliang Leng, Yuda Zhang, Zihan Li, Yunkun Yang, Zehao Jia, Xingdan Sun, Tongyao Zhang, Xiaoyi Xie, Shaoming Dong, Zheng Han, Xiangyu Cao, Faxian Xiu, Xufeng Kou, Linfeng Ai
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-9 (2021)
Nature Communications
Nature Communications
Superconductor-ferromagnet interfaces in two-dimensional heterostructures present a unique opportunity to study the interplay between superconductivity and ferromagnetism. The realization of such nanoscale heterostructures in van der Waals (vdW) crys
Autor:
Shasha Wang, Hang Liu, Thomas Alava, Haifeng Du, Dong-Ming Sun, Zheng Han, Baojuan Dong, Song Liu, Xingdan Sun, Hanwen Wang, Jing Zhang, Song Qiu, Mao-Lin Chen, Yun Sun, Qian-Bing Zhu
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-7 (2020)
Nature Communications
Nature Communications
Since its invention in the 1960s, one of the most significant evolutions of metal-oxide-semiconductor field effect transistors (MOS-FETs) would be the three dimensionalized version that makes the semiconducting channel vertically wrapped by conformal
Autor:
Julien Renard, Anike Purbawati, Andrea Locatelli, Zheng Vitto Han, Nedjma Bendiab, Tevfik Onur Menteş, Manuel Núñez-Regueiro, Abdellali Hadj-Azzem, Johann Coraux, Jan Vogel, Michael Foerster, NianJheng Wu, Vincent Bouchiat, Xingdan Sun, David Jegouso, Francesca Genuzio, André Sulpice, Laëtitia Marty, Nicolas Rougemaille, Lucia Aballe
Publikováno v:
ACS Applied Materials & Interfaces. 13:59592-59592