Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Xingchang Fu"'
Autor:
Yibang Wang, Xingchang Fu, Aihua Wu, Ye Huo, Chen Liu, Peng Luan, Lihua Lei, Faguo Liang, Chong Li
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 71:682-690
This article presents an advanced calibration method for solving the error terms due to probe–probe leakage in an on-wafer test system. A new 12-term error model for the on-wafer test system including vector network analyzer (VNA), frequency extend
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c505f816cf064dc45e805416bba300a2
https://doi.org/10.1109/tmtt.2022.3200050
https://doi.org/10.1109/tmtt.2022.3200050
Autor:
Pei Qi, Haiyang Yu, Shijie Chen, Minghua Hu, Yan Huang, Xingchang Fu, Ruping Zheng, Zhiyu Ding, Yi Peng, Jianlong Wang, Jinglei Miao, Jinsong Li, Yuezhan Li, Weiguo Wang, Shuang Zhi
Publikováno v:
Genomics. 113:450-461
Aim The co-expression network of long non-coding RNA ROR (lncRNA-ROR) and microRNA-185-3p (miR-185-3p) has not been focused on osteosarcoma. Therein, this work was initiated to uncover lncRNA-ROR and miR-185-3p functions in osteosarcoma. Methods LncR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::516f61f3ed9a87b2ed86c30eb17d5352
https://doi.org/10.1016/j.ygeno.2020.09.009
https://doi.org/10.1016/j.ygeno.2020.09.009
Publikováno v:
ASICON
In this paper, We describe a D-band (110–170GHz) low noise amplifier (LNA) MMIC structure using a 70nm InP (Indium phosphide) HEMT (high electron mobility transistor) process. This circuit structure is cascade circuits mode with two voltages bias t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7d8c47630e69b52f5d6e01ab9799eae
https://doi.org/10.1109/asicon.2017.8252619
https://doi.org/10.1109/asicon.2017.8252619
Autor:
Zhiming Wang, Xingchang Fu, Cui Yuxing, Jiang-Hui Mo, Xiguo Sun, Hui Huang, Liang Li, Xin Lü, Zhuobin Zhao, Zhifu Hu
Publikováno v:
Journal of Semiconductors. 36:084002
83-nm T-shaped gate InP-based In 0.52 Al 0.48 As/In 0.65 Ga 0.35 As pseudomorphic high electron mobility transistors (PHEMTs) with excellent DC and RF performance as well as low noise characteristics are reported, including a maximum saturation curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d93adc289a3226659f0bd589ed5a87ea
https://doi.org/10.1088/1674-4926/36/8/084002
https://doi.org/10.1088/1674-4926/36/8/084002
Publikováno v:
IOP Conference Series: Earth & Environmental Science; July2018, Vol. 170 Issue 4, p1-1, 1p