Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Xingcan Feng"'
Publikováno v:
Applied Surface Science. 459:830-834
Indium nitride (InN) has attracted much attention due to its high electron mobility and peak electron velocity, which make it suitable for fabrication of high-speed electronic devices. In this work, we report the low temperature growth of polycrystal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::773a0b38afcdabaf40835c14463187a6
https://doi.org/10.1016/j.apsusc.2018.08.093
https://doi.org/10.1016/j.apsusc.2018.08.093
Autor:
Wei Wang, Li Wang, Xingcan Feng, Hong Peng, Jinhui Gong, Yiyuan Zhu, Haiyang He, Hu Liu, Yuandan He
Publikováno v:
Optical Materials. 80:1-6
High-quality all-inorganic perovskite CsPb(BrxI1-x)3 quantum dots (QDs) with quantum yield of 50% were systematically studied as yellow light convertor for light emitting diodes (LEDs). A novel heat insulation structure was designed for the QD-conver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::857dd6c9a7ba9585c627a2a58509f711
https://doi.org/10.1016/j.optmat.2018.04.009
https://doi.org/10.1016/j.optmat.2018.04.009
Publikováno v:
Applied Physics Letters. 111:122103
A GaN/CH3NH3PbBr3 heterojunction was fabricated by depositing a GaN thin layer on a CH3NH3PbBr3 single crystal by plasma enhanced atomic layer deposition. The band alignment of the GaN/CH3NH3PbBr3 heterojunction was studied by x-ray photoelectron spe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ca2b91fc4e813241ee1553600644284
https://doi.org/10.1063/1.4997229
https://doi.org/10.1063/1.4997229
Publikováno v:
Applied Physics Letters; 9/18/2017, Vol. 111 Issue 12, p122103-1-122103-4, 4p, 1 Diagram, 1 Chart, 3 Graphs