Zobrazeno 1 - 10
of 143
pro vyhledávání: '"Xingbi Chen"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 936-942 (2019)
An novel thin layer SOI carrier-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed. The potential of the P-shield layer is clamped by two series-connected diodes. Therefore, the reverse
Externí odkaz:
https://doaj.org/article/13f409f008cc47caacae5df961d3bb89
Publikováno v:
IEEE Transactions on Electron Devices. 67:2052-2057
In this article, a novel 3.3-kV integrated emitter turn-off thyristor (IETO) with single-gate controlling is proposed. Unlike the conventional emitter turn-off thyristor (ETO) using external MOSFETs, the IETO integrates the MOSFETs monolithically to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87a325caaf1c3e7d599239d4b947ef88
https://doi.org/10.1109/ted.2020.2982798
https://doi.org/10.1109/ted.2020.2982798
Publikováno v:
IEEE Transactions on Electron Devices. 67:2066-2070
This article proposes a new idea to improve the $\text{d}{I}/\text{d}{t}$ and $\text{d}{V}/\text{d}{t}$ controllability of the lateral insulated gate bipolar transistor (LIGBT). By employing an inversion layer thyristor T to enhance the conductivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::836420f614a73d2da07322a33ee974ca
https://doi.org/10.1109/ted.2020.2982656
https://doi.org/10.1109/ted.2020.2982656
Publikováno v:
IEEE Transactions on Electron Devices. 67:1059-1065
A novel double-reduced surface field technique (RESURF) insulated gate bipolar transistor based on lateral insulated gate bipolar transistor based on silicon-on-insulator (SOI-LIGBT) with deep-trench-cathode and self-biased pMOS is proposed and inves
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::777d66c1211750d14263afcb2e41ad15
https://doi.org/10.1109/ted.2020.2964944
https://doi.org/10.1109/ted.2020.2964944
Publikováno v:
IEEE Transactions on Electron Devices. 67:1066-1070
A novel insulated gate bipolar transistor modulated by a high- ${k}$ dielectric (HK-IGBT) is presented. By laterally alternating the HK-pillar and N-drift, HK-IGBT can offer a quick and complete depletion to the drift region during the turn-off trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acebc004a17c599549efd22d8274b00f
https://doi.org/10.1109/ted.2020.2964879
https://doi.org/10.1109/ted.2020.2964879
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 594-599 (2020)
A novel 3.3 kV Shielded Insulated Gate Bipolar Transistor (SIGBT) is proposed in this paper. Unlike the partly shielded N-injector of the diode-clamped TIGBT, which is the carrier store layer, the SIGBT features a diode-clamped P-layer to completely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cf40cac9ceee0b9d99c30bc62dcd59d6
https://doi.org/10.1109/jeds.2020.3000280
https://doi.org/10.1109/jeds.2020.3000280
Publikováno v:
IEEE Transactions on Electron Devices. 67:243-248
In this article, a novel diode-clamped carrier stored trench IGBT (DC-CS-TIGBT) is proposed and investigated by the TCAD tool. Two series-connected diodes implemented on the surface of the IGBT is proposed to clamp the voltage potential of the carrie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bff3b6e66563468840f29fd47aeb11b
https://doi.org/10.1109/ted.2019.2955820
https://doi.org/10.1109/ted.2019.2955820
Publikováno v:
IEEE Transactions on Electron Devices. 66:4865-4869
A novel composite device structure with enhanced conductivity modulation silicon on insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) which consists of a normal LIGBT (NLT) region, an nMOS region (NM) and a pMOS region (PM) is propose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::240625080fa91598f07ec260d3a631cc
https://doi.org/10.1109/ted.2019.2941910
https://doi.org/10.1109/ted.2019.2941910
Publikováno v:
IEEE Transactions on Electron Devices. 66:4296-4301
A novel reverse-conducting (RC) lateral insulated gate bipolar transistor based on the silicon-on-insulator (SOI-LIGBT) with integrated parallel/antiparallel polysilicon diodes ( $\text{D}_{F}$ and $\text{D}_{R}$ ) on the top of the anode active regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::267e3a6c6c0c98698c4e728d4988db9b
https://doi.org/10.1109/ted.2019.2936515
https://doi.org/10.1109/ted.2019.2936515
Publikováno v:
IEEE Transactions on Electron Devices. 66:3690-3693
An oppositely doped islands insulated gate bipolar transistor (ODI-IGBT) is investigated for the first time. By adding one or several ODIs in the drift longitudinally equidistantly, the ODI-IGBT obtains a better electric field distribution than the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c4ea4c83969bd06b6daa009a14903db
https://doi.org/10.1109/ted.2019.2924093
https://doi.org/10.1109/ted.2019.2924093