Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Xing-ji Li"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 373-378 (2022)
SiC UMOSFET is a kind of significant power device in the supply of aerospace. But it is sensitive to space radiation. In this paper, the discrepancy of SEB behavior and research of 4H-SiC UMOSFET with the different values of particle linear energy tr
Externí odkaz:
https://doaj.org/article/c9e78ac2b5c542fb96ad7ca1f63d8078
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 591-598 (2021)
This paper presents a single-event burnout (SEB) resistance method for 4H-SiC Junction Barrier Schottky Diode (JBS) under high bias voltage and linear energy transfer (LET) conditions. The method is validated via two-dimensional numerical simulations
Externí odkaz:
https://doaj.org/article/5455cc83db2541b48cdcbca671e53cae
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 1084-1092 (2021)
In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) device
Externí odkaz:
https://doaj.org/article/d58c3b11aeab4b3eb825d025f9b2842b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1010-1015 (2020)
In this work, an improved 4H-SiC insulated gate bipolar transistor (IGBT), or CTH-IGBT, with a trench p-polySi/p-SiC heterojunction on the backside of the device is proposed to reduce the turn-off energy loss (Eoff) and turn-off time (Toff). The elec
Externí odkaz:
https://doaj.org/article/430792c9d5a04dc0bbf1b253e659f083
Publikováno v:
Micromachines, Vol 9, Iss 12, p 659 (2018)
In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. The novel layout can be radiation-hardened with a fixed
Externí odkaz:
https://doaj.org/article/51505b60ac1c4bb9b21f5d01552c583e
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:431-437
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::230e8a89f8342b9a6022b19895e91f58
https://doi.org/10.1109/tdmr.2022.3188235
https://doi.org/10.1109/tdmr.2022.3188235
Autor:
Bin Zhang, Hao Jiang, Xiao-Dong Xu, Tao Ying, Zhong-Li Liu, Wei-Qi Li, Jian-Qun Yang, Xing-Ji Li
Publikováno v:
Chinese Physics B.
Bipolar junction transistors (BJTs) are often used in spacecraft due to their excellent working characteristics. However, the complex space radiation environment induced primary knock-on atom (PKA) in BJTs through collisions, resulting in hard-to-rec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e760620d19940c9f263b1cc33a0d178
https://doi.org/10.1088/1674-1056/acd3e1
https://doi.org/10.1088/1674-1056/acd3e1
Publikováno v:
IEEE Transactions on Nuclear Science. 69:1249-1256
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::831cc5014c73a813df53a16a81ae2ed6
https://doi.org/10.1109/tns.2022.3175954
https://doi.org/10.1109/tns.2022.3175954
Publikováno v:
IEEE Transactions on Electron Devices. 69:3283-3289
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e79825553659ca482c16bce2d9cd083d
https://doi.org/10.1109/ted.2022.3166122
https://doi.org/10.1109/ted.2022.3166122
Publikováno v:
IEEE Transactions on Electron Devices. 69:664-668
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6bc7913d9d8eb5295e32ba8f62cee20
https://doi.org/10.1109/ted.2021.3135369
https://doi.org/10.1109/ted.2021.3135369