Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Xing Long Shao"'
Autor:
Cheol Seong Hwang, Kyung Jean Yoon, Yumin Kim, Young Jae Kwon, Tae Hyung Park, Dae Eun Kwon, Jung Ho Yoon, Xing Long Shao
Publikováno v:
Nanoscale. 9:11920-11928
To replace the present NAND flash memory, resistance switching random access memory (ReRAM), which has both memory and selection functionalities with a simple metal–insulator–metal structure should be implemented. To accomplish this goal, ReRAM m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d00cc65bac15001cfd73f5cfd3b4dfa
https://doi.org/10.1039/c7nr02215h
https://doi.org/10.1039/c7nr02215h
Publikováno v:
Nanoscale. 9:2358-2368
Ta2O5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4caa6aeb64c906324d5fc004b2264274
https://doi.org/10.1039/c6nr08470b
https://doi.org/10.1039/c6nr08470b
Autor:
Jung Ho, Yoon, Dae Eun, Kwon, Yumin, Kim, Young Jae, Kwon, Kyung Jean, Yoon, Tae Hyung, Park, Xing Long, Shao, Cheol Seong, Hwang
Publikováno v:
Nanoscale. 9(33)
To replace the present NAND flash memory, resistance switching random access memory (ReRAM), which has both memory and selection functionalities with a simple metal-insulator-metal structure should be implemented. To accomplish this goal, ReRAM must
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a1d15e9d03d86ceb2bc0e3543e5da7ff
https://pubmed.ncbi.nlm.nih.gov/28786468
https://pubmed.ncbi.nlm.nih.gov/28786468
Autor:
Xiang Yuan, Li, Xing Long, Shao, Yi Chuan, Wang, Hao, Jiang, Cheol Seong, Hwang, Jin Shi, Zhao
Publikováno v:
Nanoscale. 9(6)
Ta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4dd83bdc35d349c810a2935dab8d19f7
https://pubmed.ncbi.nlm.nih.gov/28144676
https://pubmed.ncbi.nlm.nih.gov/28144676
Autor:
Ran Chen, Chang Jun Chen, Jian Yun Wang, Jinshi Zhao, Hao Jiang, Kailiang Zhang, Xing Long Shao, Li Wei Zhou
Publikováno v:
ECS Transactions. 60:1015-1020
In this paper, three kinds of resistive switching device based on Cu/SiOx/TiN structure with different oxygen partial pressures were fabricated to examine and compare their characteristics to explore resistive switching mechanisms. Compared among thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8b6051abb24b112d2c2876dab829a94
https://doi.org/10.1149/06001.1015ecst
https://doi.org/10.1149/06001.1015ecst
Autor:
Kailiang Zhang, He Chao Lu, Jian Yun Wang, Chang Jun Chen, Xing Long Shao, Jinshi Zhao, Hao Jiang, Ran Chen, Li Wei Zhou
Publikováno v:
ECS Transactions. 60:551-556
The synthesis of graphene on Cu foils by using PECVD was reported in this work. The influence of the process parameter on graphene growth was studied, through a facile detection method which directly characterizes discontinuous graphene on Cu foil su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52bbfb82f229b65ed57b29be1c1ef9b8
https://doi.org/10.1149/06001.0551ecst
https://doi.org/10.1149/06001.0551ecst
Autor:
Chang Jun Chen, Yuan Liang, Ran Chen, Hao Jiang, Xing Long Shao, Li Wei Zhou, Jinshi Zhao, Jian Yun Wang, Xue Mei Zhang, Kailiang Zhang
Publikováno v:
ECS Transactions. 60:1069-1074
Bipolar resistive switching property was studied in Al/TiOx/Al structure. This structure exhibits uniform high resistance and low resistance among cell-to-cell test. The switching mechanism ascribes to space-charge-limited conduction. On the other ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd1bbb204e025c03a231cc452812fb81
https://doi.org/10.1149/06001.1069ecst
https://doi.org/10.1149/06001.1069ecst
Autor:
Xing Long Shao, Kyung Jean Yoon, Cheol Seong Hwang, Seul Ji Song, Xi Wen Hu, Kyung-min Kim, Yu Min Kim, Jung Ho Yoon, Young Jae Kwon, Jin Shi Zhao, Hae Jin Kim, Dae Eun Kwon, Tae Hyung Park
Publikováno v:
Nanoscale. 8(36)
Thermochemical and electronic trapping/detrapping mechanism-based resistance switching in TiO2 is one of the most extensively researched topics in the field of resistance-switching random access memory (ReRAM). In this study, the subtle correlation b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8660246f21423b08d54a18d700c8935
https://pubmed.ncbi.nlm.nih.gov/27604046
https://pubmed.ncbi.nlm.nih.gov/27604046
Autor:
Tae Hyung Park, Jung Ho Yoon, Hye-Jin Kim, Young Jae Kwon, Xing Long Shao, Seul Ji Song, Yumin Kim, Dae Eun Kwon, Cheol Seong Hwang, Kyung Jean Yoon, Sijung Yoo
Publikováno v:
ACS applied materialsinterfaces. 8(28)
To replace or succeed the present NAND flash memory, resistive switching random access memory (ReRAM) should be implemented in the vertical-type crossbar array configuration. The ReRAM cell must have a highly reproducible resistive switching (RS) per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc4812030f969a12c25467aabca09467
https://pubmed.ncbi.nlm.nih.gov/27347693
https://pubmed.ncbi.nlm.nih.gov/27347693
Autor:
Ran Chen, Hao Jiang, Xiang Yuan Li, Jinshi Zhao, Xing Long Shao, Jung Ho Yoon, Xiwen Hu, Cheol Seong Hwang
Publikováno v:
SCIENTIFIC REPORTS(6)
Scientific Reports
Scientific Reports
SiO2 is the most significantly used insulator layer in semiconductor devices. Its functionality was recently extended to resistance switching random access memory, where the defective SiO2 played an active role as the resistance switching (RS) layer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eaf88c0b006d90c1145aa817940b593d
https://doi.org/10.1038/srep22216
https://doi.org/10.1038/srep22216