Zobrazeno 1 - 10
of 640
pro vyhledávání: '"Xing, Huili Grace"'
Autor:
van Deurzen, Len, Kim, Eungkyun, Pieczulewski, Naomi, Zhang, Zexuan, Feduniewicz-Zmuda, Anna, Chlipala, Mikolaj, Siekacz, Marcin, Muller, David, Xing, Huili Grace, Jena, Debdeep, Turski, Henryk
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wa
Externí odkaz:
http://arxiv.org/abs/2404.03733
We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting from a rapid incr
Externí odkaz:
http://arxiv.org/abs/2309.16551
Autor:
van Deurzen, Len, Singhal, Jashan, Encomendero, Jimy, Pieczulewski, Naomi, Chang, Celesta, Cho, YongJin, Muller, David Anthony, Xing, Huili Grace, Jena, Debdeep, Brandt, Oliver, Lähnemann, Jonas
Publikováno v:
APL Materials 11, 081109 (2023)
Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of de
Externí odkaz:
http://arxiv.org/abs/2305.10542
Publikováno v:
Physical Review B 107, 125301 (2023)
Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum confinement results not only in a discrete electronic spectrum, but also i
Externí odkaz:
http://arxiv.org/abs/2303.08404
Publikováno v:
Physical Review Applied 13, 034048 (2020)
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed pol
Externí odkaz:
http://arxiv.org/abs/2303.08383
Autor:
Encomendero, Jimy, Protasenko, Vladimir, Sensale-Rodriguez, Berardi, Fay, Patrick, Rana, Farhan, Jena, Debdeep, Xing, Huili Grace
Publikováno v:
Physical Review Applied 11, 034032 (2019)
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ elect
Externí odkaz:
http://arxiv.org/abs/2303.08352
Autor:
Singhal, Jashan, Encomendero, Jimy, Cho, Yongjin, van Deurzen, Len, Zhang, Zexuan, Nomoto, Kazuki, Toita, Masato, Xing, Huili Grace, Jena, Debdeep
N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature helped in rem
Externí odkaz:
http://arxiv.org/abs/2206.11370
Publikováno v:
Applied Physics Express 15, 064004 (2022)
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V and an id
Externí odkaz:
http://arxiv.org/abs/2204.11332
Autor:
Zhang, Zexuan, Hayashi, Yusuke, Tohei, Tetsuya, Sakai, Akira, Protasenko, Vladimir, Singhal, Jashan, Miyake, Hideto, Xing, Huili Grace, Jena, Debdeep, Cho, YongJin
N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN templates.
Externí odkaz:
http://arxiv.org/abs/2204.08604
Autor:
Stokey, Megan, Korlacki, Rafal, Hilfiker, Matthew, Knight, Sean, Richter, Steffen, Darakchieva, Vanya, Jinno, Riena, Cho, Yongjin, Xing, Huili Grace, Jena, Debdeep, Oshima, Yuichi, Khan, Kamruzzaman, Ahmadi, Elaheh, Schubert, Mathias
We determine the anisotropic dielectric functions of rhombohedral $\alpha$-Ga$_2$O$_3$ by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse optical and longitudinal optical phonon mode frequencies and broadeni
Externí odkaz:
http://arxiv.org/abs/2108.12058