Zobrazeno 1 - 10
of 203
pro vyhledávání: '"Xing'ao Li"'
Publikováno v:
地震科学进展, Vol 54, Iss 10, Pp 730-741 (2024)
Based on digital elevation model (DEM), field river terrace survey and optical stimulated luminescence dating (OSL) dating, the slope, relief degree of land surface (RDLS), hypsometric integral (HI) and channel steepness index (Ksn) of the southern s
Externí odkaz:
https://doaj.org/article/0f6108344c434644bba95fc4280b0128
Publikováno v:
Nanomaterials, Vol 14, Iss 20, p 1650 (2024)
CsGeI2Br-based perovskites, with their favorable band gap and high absorption coefficient, are promising candidates for the development of efficient lead-free perovskite solar cells (PSCs). However, bulk and interfacial carrier non-radiative recombin
Externí odkaz:
https://doaj.org/article/175ab40f0d574d3bafa8c68fc7c9bbcc
Autor:
Ruiyuan Hu, Taomiao Wang, Fei Wang, Yongjun Li, Yonggui Sun, Xiao Liang, Xianfang Zhou, Guo Yang, Qiannan Li, Fan Zhang, Quanyao Zhu, Xing’ao Li, Hanlin Hu
Publikováno v:
Nanomaterials, Vol 14, Iss 8, p 653 (2024)
Due to current issues of energy-level mismatch and low transport efficiency in commonly used electron transport layers (ETLs), such as TiO2 and SnO2, finding a more effective method to passivate the ETL and perovskite interface has become an urgent m
Externí odkaz:
https://doaj.org/article/fddfe4a55e474ead847a31063680beda
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 25, Pp n/a-n/a (2023)
Abstract Multiferroics have been investigated extensively in the last decades due to their wide range of applications in high‐density multistate storage, spintronics, and novel multifunctional magnetic–electric devices. One peculiar subgroup of m
Externí odkaz:
https://doaj.org/article/80ddc0b2f5f1465ab3f8b8be615083cf
Publikováno v:
New Journal of Physics, Vol 26, Iss 11, p 113014 (2024)
We investigate the off-resonant circularly polarized light-modulated crossed Andreev reflection (CAR) in an 8-Pmmn borophene-based normal conductor/superconductor/normal conductor junction. When the signs of Fermi energies in two normal regions are o
Externí odkaz:
https://doaj.org/article/cdc4afe22c3b4f41a93f614058fd4c0a
Publikováno v:
Crystals, Vol 14, Iss 1, p 69 (2024)
Currently, neuromorphic computing is regarded as the most efficient way to solve the von Neumann bottleneck. Transistor-based devices have been considered suitable for emulating synaptic functions in neuromorphic computing due to their synergistic co
Externí odkaz:
https://doaj.org/article/110a1a34354848908ebab10900af6d58
Autor:
Shuaibo Zhai, Jiaqi Gong, Yifei Feng, Zhongbao Que, Weiwei Mao, Xuemin He, Yannan Xie, Xing’ao Li, Liang Chu
Publikováno v:
iScience, Vol 26, Iss 4, Pp 106461- (2023)
Summary: Memristors are promising information storage devices for commercial applications because of their long endurance and low power consumption. Particularly, perovskite memristors have revealed excellent resistive switching (RS) properties owing
Externí odkaz:
https://doaj.org/article/2699b99d191242fea3165cada02c0f75
Publikováno v:
Molecules, Vol 28, Iss 18, p 6601 (2023)
Hybrid perovskite materials with high light absorption coefficients, long diffusion lengths, and high mobility have attracted much attention, but their commercial development has been seriously hindered by two major problems: instability and lead tox
Externí odkaz:
https://doaj.org/article/89729bf198c44450a5f2b2d36815fb20
Autor:
Wen Huang, Xuwen Xia, Chen Zhu, Parker Steichen, Weidong Quan, Weiwei Mao, Jianping Yang, Liang Chu, Xing’ao Li
Publikováno v:
Nano-Micro Letters, Vol 13, Iss 1, Pp 1-28 (2021)
Abstract Neuromorphic computing simulates the operation of biological brain function for information processing and can potentially solve the bottleneck of the von Neumann architecture. This computing is realized based on memristive hardware neural n
Externí odkaz:
https://doaj.org/article/f0345f2e594043aebaefedaded60278f
Autor:
Wei Liu, Nanjing Liu, Shilei Ji, Hongfeng Hua, Yuhui Ma, Ruiyuan Hu, Jian Zhang, Liang Chu, Xing’ao Li, Wei Huang
Publikováno v:
Nano-Micro Letters, Vol 12, Iss 1, Pp 1-11 (2020)
Abstract Organic cation and halide anion defects are omnipresent in the perovskite films, which will destroy perovskite electronic structure and downgrade the properties of devices. Defect passivation in halide perovskites is crucial to the applicati
Externí odkaz:
https://doaj.org/article/9e33d353d0f94ea6817fd3c36425a161