Zobrazeno 1 - 10
of 256
pro vyhledávání: '"Xinfan, Huang"'
Autor:
Hengping Dong, Kunji Chen, Huafeng Yang, Zhongyuan Ma, Jun Xu, Wei Li, Linwei Yu, Xinfan Huang
Publikováno v:
APL Photonics, Vol 7, Iss 2, Pp 026102-026102-9 (2022)
The photoresponsivity and response speed are two key figures of merit for the photodetector (PD). According to the previous reports, there is an inherent contradiction between high photoresponsivity and fast response speed in normal photoconductive-t
Externí odkaz:
https://doaj.org/article/86e5d518e2bd40dcbddec906e5435267
Publikováno v:
Frontiers in Physics, Vol 7 (2019)
Silicon oxynitride films are one kind of important gate dielectric materials for applications in the fabrication of silicon CMOS integrated circuits (ICs), which have been widely and deeply studied. However, with the significant demand of the technol
Externí odkaz:
https://doaj.org/article/2a13845d717541949839927e86ec8bd6
Autor:
Zhongyuan Ma, Wen Wang, Huafeng Yang, Xiaofan Jiang, Jie Yu, Hua Qin, Ling Xu, Kunji Chen, Xinfan Huang, Wei Li, Jun Xu, Duan Feng
Publikováno v:
Journal of Applied Physics; 2/21/2016, Vol. 119 Issue 7, p075702-1-075702-6, 6p, 3 Diagrams, 5 Graphs
Autor:
Jie Yu, Kunji Chen, Zhongyuan Ma, Xinxin Zhang, Xiaofan Jiang, Xinfan Huang, Yongxing Zhang, Lingling Wang
Publikováno v:
Journal of Applied Physics; 2016, Vol. 119 Issue 4, p1-5, 5p, 1 Color Photograph, 4 Graphs
Autor:
Huafeng Yang, Ling Xu, Kunji Chen, Zhongyuan Ma, Xiaofan Jiang, Sheng Ren, Jun Xu, Wei Li, Xinfan Huang, Duan Feng, Jie Yu
Publikováno v:
physica status solidi (a). 213:1878-1884
In this study, we investigate the microstructure and formation of segregated silicon nanocrystals (nc-Si) from annealed Si-rich SixN/SiyN multilayers. It is found the nc-Si are separated and arranged in every sublayer with two different grain sizes.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b45fd87d3b1d6b213c6648a1c87e6e37
https://doi.org/10.1002/pssa.201532897
https://doi.org/10.1002/pssa.201532897
Publikováno v:
Journal of Applied Physics. 128:184902
Memristors with tunable conductance characteristics have attracted great attention in high density memory and neuromorphic computing. However, the dynamics of conductance change for filamentary-type memristors is generally asymmetric: The set transit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11b1b9f519ed60dac2918b1b048393cf
https://doi.org/10.1063/5.0024668
https://doi.org/10.1063/5.0024668
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, we systematically investigated the dependence of three types of bottom electrode (BE) materials, such as active Cu and Ag, inert Pt and Au, and oxygen-affinity W and Ti, on resistive switching characteristics for HfO 2 /TiO x bilayer s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae4ee0d55e5d62b5d6d3e3bcaf058b21
https://doi.org/10.1109/icsict.2018.8565024
https://doi.org/10.1109/icsict.2018.8565024
Publikováno v:
2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
Mechanism of conductive defect states based filament for MOM (metal/oxide/metal) resistive switching structures has been proposed. Emphasis is given on the point defects of silicon dangling bonds percolation model in oxide semiconductor Pt/SiO x /Pt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::574c504d27bd9417ddef6718a123f59b
https://doi.org/10.1109/icsict.2018.8565819
https://doi.org/10.1109/icsict.2018.8565819
Autor:
Jian, Liu, Huafeng, Yang, Yang, Ji, Zhongyuan, Ma, Kunji, Chen, Xinxin, Zhang, Hui, Zhang, Yang, Sun, Xinfan, Huang, Shunri, Oda
Publikováno v:
Nanotechnology. 29(41)
We reported on a Ti/HfO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4bb7ff9fece2fee0569173ff37286358
https://pubmed.ncbi.nlm.nih.gov/30051885
https://pubmed.ncbi.nlm.nih.gov/30051885
Autor:
Xiaofan Jiang, Zhongyuan Ma, Huafeng Yang, Jie Yu, Wen Wang, Wenping Zhang, Wei Li, Jun Xu, Ling Xu, Kunji Chen, Xinfan Huang, Duan Feng
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 12, p1-5, 5p, 3 Color Photographs, 1 Black and White Photograph, 6 Graphs