Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Xincheng Yi"'
Publikováno v:
BMC Musculoskeletal Disorders, Vol 23, Iss 1, Pp 1-9 (2022)
Abstract Background The one-stage posterior approach for treating spinal infection has recently been generally accepted. However, severe vertebral body loss caused by infection remains a major challenge in posterior surgery. This study was conducted
Externí odkaz:
https://doaj.org/article/9c02d4677c614c9abdb060ce2e4cf7b3
Publikováno v:
Indian Journal of Orthopaedics
Indian Journal of Orthopaedics, Vol 52, Iss 4, Pp 411-417 (2018)
Indian Journal of Orthopaedics, Vol 52, Iss 4, Pp 411-417 (2018)
Background: Gustilo Anderson III B/C open tibial fractures are more difficult to manage than I, II, and III A fractures. These open tibial fractures are often associated with wound infection, soft tissue necrosis, bone nonunion, osteomyelitis or ampu
Publikováno v:
Journal of Investigative Surgery. 26:204-209
To evaluate the surgical outcomes of talar, posterior process displaced fractures with posteromedial approach. From January 2008 to December 2010, 18 patients with displaced fracture of talar posterior process were treated in our department. Open red
Autor:
Huiyuan Wang, Siqin Liu, Xincheng Yin, Mingming Huang, Yanzhe Fu, Xun Chen, Chao Wang, Jingyong Sun, Xin Yan, Jianmin Han, Jiping Yang, Zhijian Wang, Lizhen Wang, Yubo Fan, Jiebo Li
Publikováno v:
International Journal of Extreme Manufacturing, Vol 6, Iss 4, p 045004 (2024)
3D printing techniques offer an effective method in fabricating complex radially multi-material structures. However, it is challenging for complex and delicate radially multi-material model geometries without supporting structures, such as tissue ves
Externí odkaz:
https://doaj.org/article/7d8f3d58cd7c4fbfa3d5b3dea2d64765
Publikováno v:
Crystals, Vol 12, Iss 1, p 101 (2022)
Single-crystal SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. An ultrasmooth surface with atomic surface roughness that is scratch free and subsurface damage (SSD) fre
Externí odkaz:
https://doaj.org/article/c3e6b05dc68a4fb882de279d5fcf92a3
Publikováno v:
Micromachines, Vol 12, Iss 6, p 606 (2021)
Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP
Externí odkaz:
https://doaj.org/article/f704994d1de748b18171a77ad721bbdd
Publikováno v:
Applied Sciences, Vol 10, Iss 17, p 5944 (2020)
In this paper, a series of indentation tests in which the maximum normal force ranged from 0.4 to 3.3 N were carried out to determine the fracture toughness of 4H-SiC single crystals. The results indicated that an appropriate ratio of the distance fr
Externí odkaz:
https://doaj.org/article/447abfafdb2746e6a14a6168ec6e6ef3
Publikováno v:
Micromachines, Vol 11, Iss 1, p 102 (2020)
In this paper, theoretical models of the critical indentation depth and critical force on brittle materials using cleavage strength and contact theory are proposed. A Berkovich indenter is adopted for nanoindentation tests on a 4H-SiC single crystal
Externí odkaz:
https://doaj.org/article/676eaa55fa6b489db2b18c79c1c9fa3b
Publikováno v:
Applied Sciences, Vol 8, Iss 9, p 1443 (2018)
The electric discharge machining (EDM) interelectrode gap directly determines the discharge state, which affects the machining efficiency, workpiece surface quality, and the tool wear rate. The measurement of the real-time varying interelectrode gap
Externí odkaz:
https://doaj.org/article/f352a1989b6649599381a03b7dfb2cd2