Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Xin-Ying Tsai"'
Autor:
Shambel Abate Marye, Xin-Ying Tsai, Ravi Ranjan Kumar, Fu-Gow Tarntair, Ray Hua Horng, Niall Tumilty
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-7 (2024)
Abstract The development of next-generation materials such as hBN and Ga2O3 remains a topic of intense focus owing to their suitability for efficient deep ultraviolet (DUV) emission and power electronic applications. In this study, we combine p-type
Externí odkaz:
https://doaj.org/article/4401bee5c4e44351a7efb8fc8655ce86
Autor:
Chih-Yang Huang, Xin-Ying Tsai, Fu-Gow Tarntair, Catherine Langpoklakpam, Thien Sao Ngo, Pei-Jung Wang, Yu-Cheng Kao, Yi-Kai Hsiao, Niall Tumilty, Hao-Chung Kuo, Tian-Li Wu, Ching-Lien Hsiao, Ray-Hua Horng
Publikováno v:
Materials Today Advances, Vol 22, Iss , Pp 100499- (2024)
Although advancements in n- and p-doping of gallium oxide (Ga2O3) are underway, the realization of functional pn diodes remains elusive. Here, we present the successful fabrication of a Ga2O3 pn diode utilizing ion implantation technology. The Ga2O3
Externí odkaz:
https://doaj.org/article/661d2bf1d63c48fda8b5fd86ed82dea0
Autor:
Ray Hua Horng, Xin-Ying Tsai, Fu-Gow Tarntair, Jia-Min Shieh, Shao-Hui Hsu, Jitendra Pratap Singh, Guan-Cheng Su, Po-Liang Liu
Publikováno v:
Materials Today Advances, Vol 20, Iss , Pp 100436- (2023)
This study utilized various phosphorus-ion implantation techniques, incorporating low, medium, and high doses, to investigate the electrical properties of unintentionally doped β-Ga2O3 epilayers. These epilayers were grown on sapphire substrates by
Externí odkaz:
https://doaj.org/article/87f286481e074710b610a7ddf7c7e6a2
Autor:
Hung-Ming Kuo, Ting-Chang Chang, Kai-Chun Chang, Hsin-Ni Lin, Ting-Tzu Kuo, Chien-Hung Yeh, Ya-Huan Lee, Jia-Hong Lin, Xin-Ying Tsai, Jen-Wei Huang, Simon Sze
Publikováno v:
IEEE Transactions on Electron Devices. 70:2216-2221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9cf1de9a2ddad775944c6dfd572ca62
https://doi.org/10.1109/ted.2023.3255829
https://doi.org/10.1109/ted.2023.3255829
Autor:
Sheng-Yao Chou, Pei-Yu Wu, Ming-Chen Chen, Ting-Chang Chang, Xin-Ying Tsai, Shih-Kai Lin, Ting-Tzu Kuo, Wei-Chen Huang, Hong-Yi Tu, Chung-Wei Wu, Tsung-Ming Tsai, Jen-Wei Huang
Publikováno v:
IEEE Electron Device Letters. 44:213-216
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26a8148e9027d9dc06bf54ce523439bf
https://doi.org/10.1109/led.2022.3232610
https://doi.org/10.1109/led.2022.3232610
Autor:
Yu-Bo Wang, Ting-Chang Chang, Shih-Kai Lin, Pei-Yu Wu, Yong-Ci Zhang, Yung-Fang Tan, Wen-Chung Chen, Chung-Wei Wu, Sheng-Yao Chou, Kuan-Ju Zhou, Li-Chuan Sun, Xin-Ying Tsai, Simon M. Sze
Publikováno v:
IEEE Transactions on Electron Devices. 69:6705-6709
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d062390e041964907a9024a26a73ebbe
https://doi.org/10.1109/ted.2022.3215932
https://doi.org/10.1109/ted.2022.3215932
Autor:
Pei-Yu Wu, Xin-Ying Tsai, Ting-Chang Chang, Yu-Hsuan Yeh, Wei-Chen Huang, Kai-Chun Chang, Tsung-Ming Tsai, Jen-Wei Huang
Publikováno v:
IEEE Transactions on Electron Devices. 69:4218-4223
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f96d8e10c898f3a6e7672042d353746
https://doi.org/10.1109/ted.2022.3184905
https://doi.org/10.1109/ted.2022.3184905
Publikováno v:
2023 35th International Conference on Microelectronic Test Structure (ICMTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f27dee03c20186d2e775c63fc6667845
https://doi.org/10.1109/icmts55420.2023.10094072
https://doi.org/10.1109/icmts55420.2023.10094072
Autor:
Ya-Ting Chien, Hong-Yi Tu, Wen-Chung Chen, Yu-Zhe Zheng, Sheng-Yao Chou, Pei-Jun Sun, Xin-Ying Tsai, Liu-Wen Chang, Ming-Chi Chou, Tsung-Ming Tsai
Publikováno v:
Materials Science in Semiconductor Processing. 158:107343
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::adfa1d835adbd39680dc9d5e8aa60f86
https://doi.org/10.1016/j.mssp.2023.107343
https://doi.org/10.1016/j.mssp.2023.107343
Autor:
Kuo-Jen Chang, Fu-Yuan Jin, Ting-Chang Chang, Hao-Xuan Zheng, Tsung-Ming Tsai, Yu-Fa Tu, Xin-Ying Tsai, Guan-Shian Liu, Min-Chen Chen, Yung-Fang Tan, Jen-Wei Huang, Pei-Yu Wu
Publikováno v:
Semiconductor Science and Technology. 36:085005
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20c281856c1c99d15ba020d47c2348ed
https://doi.org/10.1088/1361-6641/ac0b9b
https://doi.org/10.1088/1361-6641/ac0b9b