Zobrazeno 1 - 10
of 315
pro vyhledávání: '"Xin-Ping Qu"'
Publikováno v:
AIP Advances, Vol 12, Iss 11, Pp 115101-115101-8 (2022)
In this work, an ultra-thin cobalt film is used as a passivation layer to achieve a Cu–Cu quasi-direct bonding process, and successful bonding was achieved at the bonding temperature of 230 °C with the bonding pressure of 0.5 MPa in non-vacuum con
Externí odkaz:
https://doaj.org/article/67b61b8b5f5d47b8a0161a25e0ebed42
Autor:
Yuan Zhang, Xin-Ping Qu
Publikováno v:
AIP Advances, Vol 9, Iss 5, Pp 055221-055221-7 (2019)
Achieving low resistance contacts and high carrier mobility are common concerns for obtaining high performance of graphene devices. In graphene FETs (GFETs), the work functions (WF) of electrode materials and metal-graphene (M-G) contact configuratio
Externí odkaz:
https://doaj.org/article/44434828f0fa4dce83729089e4c7cd5a
Autor:
Yingjie Wang, Qiancheng Sun, Wenlong Tang, Li-Na Qiu, Xin-Ping Qu, Satomi Hamada, Yutaka Wada, Hirokuni Hiyama
Publikováno v:
ECS Journal of Solid State Science & Technology; Sep2023, Vol. 12 Issue 9, p1-12, 12p
Publikováno v:
Journal of Materials Science: Materials in Electronics. 33:6318-6328
Publikováno v:
2022 IEEE International Interconnect Technology Conference (IITC).
Publikováno v:
Pediatric Neurology. 105:35-40
Background We identified seizure characteristics, long-term outcome, and predictors of persistent seizures in children with anti-N-methyl- d -aspartate receptor (anti-NMDAR) encephalitis. Method Data were analyzed from patients with anti-NMDAR enceph
Autor:
Yingjie Wang, Bingbing Wu, Li-Na Qiu, Lianfeng Hu, Haijun Cheng, Xin-Ping Qu, Satomi Hamada, Yutaka Wada, Hirokuni Hiyama
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:014001
It is difficult to remove nanoceria abrasives from the SiO2 substrate after the shallow trench isolation (STI) chemical mechanical polishing process. In this work, we studied the cleaning behavior of ceria particles by using an acidic cleaning soluti
Publikováno v:
Solid-State Electronics. 152:4-10
A unified explanation is proposed to consistently explain the two-step degradation of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) under DC positive bias temperature instability (PBTI) stress without or with different drain stress voltages
Autor:
Ai-Guo Yang, Peng Yang, Ran Liu, Youwei Zhang, Laigui Hu, Chunxiao Cong, Xin-Ping Qu, Zhi-Jun Qiu, Rong-Jun Zhang, Jing Chen, Haomin Wang, Lingxiu Chen
Publikováno v:
Nano Research. 12:823-827
Chemical vapor deposition (CVD) is the most efficient method to grow large-area two dimensional (2D) transition metal dichiacogenides (TMDCs) in high quality. Monolayer molybdenum disulfide (MoS2) and seed-assistant are the mostly selected 2D TMDC an
Publikováno v:
Soft Matter. 15:9991-9996
We report on the use of a selective, non-volatile ionic liquid (IL) to enhance the self-assembly via solvent annealing of a low molecular weight block copolymer (BCP) of styrene and 2-vinylpyridine (2VP) suitable for generating sub-10 nm features. Di