Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Xin-Peng Lin"'
Publikováno v:
IEEE Transactions on Electron Devices. 65:1759-1764
Si-substrate-based AlGaN/GaN high-electron mobility power transistors with low pressure chemical vapor deposition (LPCVD) SiN x as gate isolation material are fabricated on a 6-in wafer by CMOS compatible process. The dielectric failure by forward-bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0dad72978870b2f32faa4b32c74b0eb9
https://doi.org/10.1109/ted.2018.2813985
https://doi.org/10.1109/ted.2018.2813985
Publikováno v:
Materials Science Forum. 913:870-875
In this work, a charge storage based enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. A stacked gate dielectrics, consisting of a tunnel oxide, a charge trap layer and a blocking oxide are applied
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf5fab4facad9d53252a5352ac6df216
https://doi.org/10.4028/www.scientific.net/msf.913.870
https://doi.org/10.4028/www.scientific.net/msf.913.870
Publikováno v:
Solid-State Electronics. 137:52-57
In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc63c58310f726c70eb449d97df3c61f
https://doi.org/10.1016/j.sse.2017.08.005
https://doi.org/10.1016/j.sse.2017.08.005
Publikováno v:
Materials at High Temperatures. 33:596-603
Ct is an important parameter in predicting creep crack growth life from the small-scale creep stage to the extensive steady state creep stage. In this paper, weld interface and non-interface creep cracks for compact tension (CT) specimens with heat-a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40d3fac64d5c83b342cad26c00f92004
https://doi.org/10.1080/09603409.2016.1197994
https://doi.org/10.1080/09603409.2016.1197994
Publikováno v:
ASICON
In this paper, we sums up our resent progress on the enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) which are based on charge storage, including the split floating gates (FGs) HEMT and the one with oxide-SiN-oxide (ONO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ba352fd1bf4c7f309cca03b2dc52ab6
https://doi.org/10.1109/asicon.2017.8252562
https://doi.org/10.1109/asicon.2017.8252562
Publikováno v:
Alzheimer's & Dementia. 15:P1296-P1296
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffa9b9a28cf4729a9f8304b3de63c337
https://doi.org/10.1016/j.jalz.2019.06.3720
https://doi.org/10.1016/j.jalz.2019.06.3720
Publikováno v:
Chinese Physics B. 27:127302
In this work, the field plate termination is studied for Ga2O3 Schottky barrier diodes (SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated. It i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13e14a5282c10ed32481743fe3c00294
https://doi.org/10.1088/1674-1056/27/12/127302
https://doi.org/10.1088/1674-1056/27/12/127302
Publikováno v:
Chinese Physics B. 26:047305
A novel enhancement-mode AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. Specifically, several split floating gates (FGs) with negative charges are inserted to the conventional MIS structure. The simulation results reveale
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e610e171a07d49a59e84c0355b8f775
https://doi.org/10.1088/1674-1056/26/4/047305
https://doi.org/10.1088/1674-1056/26/4/047305
Autor:
Hong-Wu Xu, Yue-Jun Huang, Ze-Yu Xie, Lan Lin, Yan-Chun Guo, Ze-Rui Zhuang, Xin-Peng Lin, Wen Zhou, Mu Li, Hai-Hua Huang, Xiao-Long Weoi, Kwan Man, Guo-Jun Zhang
Publikováno v:
BMC Cancer; 2013, Vol. 13 Issue 1, p1-9, 9p, 2 Color Photographs, 4 Charts, 1 Graph
Publikováno v:
Chinese Physics B; Dec2018, Vol. 27 Issue 12, p1-1, 1p