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pro vyhledávání: '"Xin-He Zheng"'
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Publikováno v:
Journal of Semiconductors. 37:014004
A reasonably-thick GaNAs/GaInAs superlattice could be an option as a roughly 1 eV subcell to achieve high-efficiency multi-junction solar cells on a lattice-matched Ge substrate. A detailed consideration of a high-efficiency design for a GaInP/GaAs/1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cff3c5a11d3bf59c2dbd05224afdc283
https://doi.org/10.1088/1674-4926/37/1/014004
https://doi.org/10.1088/1674-4926/37/1/014004
Publikováno v:
Chinese Physics B. 24:108802
We report a GaInP/GaAs tandem solar cell with a novel GaAs tunnel junction (TJ) with using tellurium (Te) and magnesium (Mg) as n- and p-type dopants via dual-filament low temperature effusion cells grown by molecular beam epitaxy (MBE) at low temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99b6b4da27f0128cbd8b41d5431a9ba6
https://doi.org/10.1088/1674-1056/24/10/108802
https://doi.org/10.1088/1674-1056/24/10/108802
Publikováno v:
Chinese Physics Letters. 32:057301
We demonstrate nearly 1 eV GaN0.03As0.97/In0.09Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3e3517e16076388908dcf8ee451b519
https://doi.org/10.1088/0256-307x/32/5/057301
https://doi.org/10.1088/0256-307x/32/5/057301
Autor:
San-Jie Liu, Ying-Feng He, Hui-Yun Wei, Peng Qiu, Yi-Meng Song, Yun-Lai An, Abdul Rehman, Ming-Zeng Peng, Xin-He Zheng
Publikováno v:
Chinese Physics B; Feb2019, Vol. 28 Issue 2, p1-1, 1p
Autor:
Cai-Xia Hou, Xin-He Zheng, Rui Jia, Ke Tao, San-Jie Liu, Shuai Jiang, Peng-Fei Zhang, Heng-Chao Sun, Yong-Tao Li
Publikováno v:
Chinese Physics B; Aug2017, Vol. 26 Issue 9, p1-1, 1p