Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Xin-Guan Lin"'
Autor:
Xin-Guan Lin, 林心冠
99
A series of benzocyclobutene-functionalized random copolymers of styrene and 4-vinylpyridine were synthesized by nitroxide-mediated controlled radical polymerization with BPO and TEMPO.Our research was to use these random copolymers [P(S-r-BC
A series of benzocyclobutene-functionalized random copolymers of styrene and 4-vinylpyridine were synthesized by nitroxide-mediated controlled radical polymerization with BPO and TEMPO.Our research was to use these random copolymers [P(S-r-BC
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/94226485998043208737
Autor:
Kuo-Feng Lo, Kuang-Chao Chen, Nan-Tzu Lian, Tahone Yang, Xin-Guan Lin, Fang-Hao Hsu, Hong-Ji Lee
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
NF 3 /NH 3 remote plasmas are used in oxide etch back process prior to the salicide process of word lines (WL) owing to high etch selectivity of silicon oxide over polysilicon. The etch saturation behavior which performs etch stop with a certain peri
Autor:
Shih-Chin Lee, Hong-Ji Lee, Hsu-Sheng Yu, Chih-Kai Yang, Shao-En Chang, Nan-Tzu Lian, Tahone Yang, Kuo-Feng Lo, Kuang-Chao Chen, Xin-Guan Lin
Publikováno v:
2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC).
This paper presents a case study on a process excursion where a subtle defect spray with twelve pairs of defects aggregated flow pattern on the front side of the wafer. The defect of interest is molten tungsten (W) balls which are generated in a diel
Autor:
Han-Hui Hsu, Hong-Ji Lee, Chih-Yuan Lu, Kuo-Feng Lo, Yuan-Chieh Chiu, Fang-Hao Hsu, Kuang-Chao Chen, Xin-Guan Lin, Nan-Tzu Lian, Tahone Yang
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
Down-flow plasma etching is mentioned instead of high-density capacitively coupled plasma (CCP) etching to prevent the control gate (CG) against physical damage during the intra-level dielectric (ILD) etch back, which is the process prior to form cob
Autor:
Fang-Hao Hsu, Kuo-Feng Lo, Xin-Guan Lin, Han-Hui Hsu, Yuan-Chieh Chiu, Hong-Ji Lee, Nan-Tzu Lian, Tahone Yang, Kuang-Chao Chen, Chih-Yuan Lu
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014); 2014, p242-244, 3p