Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Xin-Cun Peng"'
Publikováno v:
DEStech Transactions on Environment, Energy and Earth Sciences.
The device-related parameters of 0.5eV Ga0.75In0.25Sb TPV cell were analyzed by considering the effects of carrier recombination and incident radiation spectra. Regarding the investigated device, we had demonstrated that the optimum structure of the
Publikováno v:
Applied Mechanics and Materials. 620:457-460
Pin structure GaN-based alpha particle detector with epitaxial growth on c-plane sapphire substrate through metal organic chemical vapor deposition (MOCVD) method, uses electron beam evaporation and photoetching machine to produce the ohmic contact e
Improvement on Size Uniformity of SiO2 Nanospheres Applied in Si Optical Resonance Nanopillar-arrays
Publikováno v:
Journal of Inorganic Materials. 34:734
Publikováno v:
Chinese Physics Letters. 34:097301
For the frequency range of 1 kHz–10 MHz, the interface state density of Ni contacts on p-GaN is studied using capacitance-voltage (C–V) and conductance-frequency-voltage (G–f–V) measurements at room temperature. To obtain the real capacitance
Publikováno v:
Chinese Physics Letters; Aug2017, Vol. 34 Issue 9, p1-1, 1p