Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Xin Lun Li"'
Publikováno v:
Frontiers in Medicine, Vol 8 (2021)
Objective: Both rhino-orbital-cerebral mycosis and lethal midline granuloma (LMG) may result in midline destruction. LMG has now been generally considered as a natural killer/T cell lymphoma, nasal type (ENKTL-NT) with an association of EBV. Fungi ha
Externí odkaz:
https://doaj.org/article/69be3b7f1ac945809ce5b6f17828b0be
Publikováno v:
Micromachines, Vol 10, Iss 9, p 590 (2019)
Dynamic random access memory (DRAM) circuits require periodic refresh operations to prevent data loss. As DRAM density increases, DRAM refresh overhead is even worse due to the increase of the refresh cycle time. However, because of few the cells in
Externí odkaz:
https://doaj.org/article/c1548a410470404da238cbe751b7b13f
Publikováno v:
Frontiers in Endocrinology
Frontiers in Endocrinology, Vol 12 (2021)
Frontiers in Endocrinology, Vol 12 (2021)
Globally, nearly 40 percent of all diabetic patients develop serious diabetic kidney disease (DKD). The identification of the potential early-stage biomarkers and elucidation of their underlying molecular mechanisms in DKD are required. In this study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5ff12fab2d5aefa03a19c70c845c5079
https://doi.org/10.3389/fendo.2021.721202
https://doi.org/10.3389/fendo.2021.721202
Publikováno v:
Panminerva Medica.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::269f7f6b653352dced98968506d627ca
https://doi.org/10.23736/s0031-0808.20.04254-8
https://doi.org/10.23736/s0031-0808.20.04254-8
Publikováno v:
Frontiers in Medicine, Vol 8 (2021)
Frontiers in Medicine, 8
Frontiers in Medicine
Frontiers in Medicine, 8
Frontiers in Medicine
Objective: Both rhino-orbital-cerebral mycosis and lethal midline granuloma (LMG) may result in midline destruction. LMG has now been generally considered as a natural killer/T cell lymphoma, nasal type (ENKTL-NT) with an association of EBV. Fungi ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c53b5f805c704bffc9c7374c063dff1
https://www.frontiersin.org/articles/10.3389/fmed.2021.578684/full
https://www.frontiersin.org/articles/10.3389/fmed.2021.578684/full
Publikováno v:
Zeitschrift für Kristallographie - New Crystal Structures. 235:767-769
C26H27ClN8NiO7, triclinic, P1̄ (no. 2), a = 9.893(2) Å, b = 11.503(2) Å, c = 13.295(3) Å, α = 78.77(3)°, β = 70.52(3)°, γ = 83.40(3)°, V = 1397.0(6) Å3, Z = 2, R gt(F) = 0.0423, wR ref(F 2) = 0.1032, T = 153.15 K.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9410edad6dfc65fb1ea0ac52bf8fb42a
https://doi.org/10.1515/ncrs-2019-0862
https://doi.org/10.1515/ncrs-2019-0862
Publikováno v:
Micromachines
Volume 10
Issue 9
Micromachines, Vol 10, Iss 9, p 590 (2019)
Volume 10
Issue 9
Micromachines, Vol 10, Iss 9, p 590 (2019)
Dynamic random access memory (DRAM) circuits require periodic refresh operations to prevent data loss. As DRAM density increases, DRAM refresh overhead is even worse due to the increase of the refresh cycle time. However, because of few the cells in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::32140f9a0577ca3e15c884ad3c02e69a
Publikováno v:
2018 7th International Symposium on Next Generation Electronics (ISNE).
Due to few cells in memory that have lower retention time, DRAM have to raise the refresh frequency to keep the data integrity, and produce unnecessary refresh for the other normal cells, which result in large refresh power consumption and the delay
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7f55ab194b7c3a24aa563b96833c019
https://doi.org/10.1109/isne.2018.8394713
https://doi.org/10.1109/isne.2018.8394713
Publikováno v:
2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC).
In DRAM refresh, due to a few cells that have lower retention time, it makes DRAM controller to raise refresh frequency to keep the data integrity, and produces unnecessary refresh for the other normal cells which resulting in large DRAM refresh over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b33ef06787eaa793798391392686a70b
https://doi.org/10.1109/edssc.2017.8126536
https://doi.org/10.1109/edssc.2017.8126536
Autor:
Xin-Lun Li, 李欣倫
105
In DRAM circuit, it needs refresh the storing data to keep its accuracy. Due to few cells in memory [1] that have lower retention time than the other cells, DRAM have to raise the refresh frequency to keep the data integrity, and produces un
In DRAM circuit, it needs refresh the storing data to keep its accuracy. Due to few cells in memory [1] that have lower retention time than the other cells, DRAM have to raise the refresh frequency to keep the data integrity, and produces un
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/47035568668302596246
