Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Xin Hong Cheng"'
Publikováno v:
Key Engineering Materials. 947:89-94
The effect of the termination structure on the unclamped inductive switching (UIS) failure is analyzed for two kinds of SiC MOSFET, where S-MOS and G-MOS termination structure are adopted. The MOSFETs are named as S-MOS and G-MOS according to the bus
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c6c725a9a2e96395cd25e7563ae2546
https://doi.org/10.4028/p-4x89vo
https://doi.org/10.4028/p-4x89vo
Autor:
You-Wei ZHANG, Li WAN, Xin-Hong CHENG, Zhong-Jian WANG, Chao XIA, Duo CAO, Ting-Ting JIA, Yue-Hui YU
Publikováno v:
Journal of Inorganic Materials. 27:956-960
采用水基原子层沉积(H 2 O-based ALD)方法在石墨烯上直接生长Al 2 O 3 介质薄膜, 研究了Al 2 O 3 成核机理. 原子力显微镜(AFM)对Al 2 O 3 薄膜微观形态分析表明, 沉积温度决定着Al 2 O 3 在石墨烯表面的
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb342480a26077ed607e71846bc207dc
https://doi.org/10.3724/sp.j.1077.2012.11663
https://doi.org/10.3724/sp.j.1077.2012.11663
Publikováno v:
Chinese Physics; Aug2007, Vol. 16 Issue 8, p1-1, 1p