Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Xin Dai Lin"'
Autor:
Wen-Chang Huang, Jo Lun Chiu, Xin Dai Lin, Yu Ching Lin, Shin Chieh Tsai, Wei Ming Su, Chen Yuan Weng, Chien Cheng Lu, Chia Feng Lin, Hsiang Chen
Publikováno v:
Results in Physics, Vol 10, Iss , Pp 132-137 (2018)
In this research, graphene was incorporated into the ZnO nanorods (NRs) growth in two different ways to enlarge the rod diameter of ZnO NRs on porous silicon (PS) substrates. We etched the P-type Si (1 0 0) wafer to form the PS layer in solution with
Externí odkaz:
https://doaj.org/article/ecc6057d4b9e49c59c0d6deba3c4bcef
Autor:
Yu Sheng Tsai, Xin Dai Lin, Wei Lun Chan, Shang Che Tsai, Wei Jen Liao, Yew Chung Sermon Wu, Hsiang Chen
Publikováno v:
Nanomaterials, Vol 10, Iss 8, p 1521 (2020)
Ultraviolet A light (UV-A, 320–400 nm), which is unblockable by sunscreen, requires careful detection for disease avoidance. In this study, we propose a novel photosensing device capable of detecting UV-A. Cancer-causing UV light can be simultaneou
Externí odkaz:
https://doaj.org/article/dbe141a672ab4b67a04ae3a113f64f8f
Publikováno v:
Discover Nano, Vol 19, Iss 1, Pp 1-9 (2024)
Abstract In this study, arrays of μLEDs in four different sizes (5 × 5 μm2, 10 × 10 μm2, 25 × 25 μm2, 50 × 50 μm2) were fabricated using a flip-chip bonding process. Two passivation processes were investigated with one involving a single lay
Externí odkaz:
https://doaj.org/article/2084a40551ed46129c6dc96c4f7d5599
Improved electrical properties of micro light-emitting diode displays by ion implantation technology
Publikováno v:
Discover Nano. 18
Generally, the inductively coupled plasma-reactive ion etching (ICP-RIE) mesa technology was used to remove p-GaN/MQWs and expose n-GaN for electrical contact in a fabricated micro light-emitting diode (μLED). In this process, the exposed sidewalls
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::140c86fa9b6ff14ca3218c5f7c06a50e
https://doi.org/10.1186/s11671-023-03819-3
https://doi.org/10.1186/s11671-023-03819-3
Autor:
Xin Dai Lin, YewChung Sermon Wu, Hsiang Chen, Wei Lun Chan, Yu Sheng Tsai, Wei Jen Liao, Shang Che Tsai
Publikováno v:
Nanomaterials
Volume 10
Issue 8
Nanomaterials, Vol 10, Iss 1521, p 1521 (2020)
Volume 10
Issue 8
Nanomaterials, Vol 10, Iss 1521, p 1521 (2020)
Ultraviolet A light (UV-A, 320&ndash
400 nm), which is unblockable by sunscreen, requires careful detection for disease avoidance. In this study, we propose a novel photosensing device capable of detecting UV-A. Cancer-causing UV light can be si
400 nm), which is unblockable by sunscreen, requires careful detection for disease avoidance. In this study, we propose a novel photosensing device capable of detecting UV-A. Cancer-causing UV light can be si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ef4b8d37566982cb125ab605c0ae494