Výsledky vyhledávání - "Xie Xiangnan"

Akademický článek

Helicity-dependent THz emission induced by ultrafast spin photocurrent in nodal-line semimetal candidate Mg3Bi2

Autor: Tong Mingyu, Hu Yuze, Xie Xiangnan, Zhu Xiegang, Wang Zhenyu, Cheng Xiang'ai, Jiang Tian

Publikováno v: Opto-Electronic Advances, Vol 3, Iss 12, Pp 200023-1-200023-8 (2020)

Helicity-dependent ultrafast spin current generated by circularly polarized photons in topological materials holds the crux to many technological improvements, such as quantum communications, on-chip communication processing and storage. Here, we pre

Externí odkaz: https://doaj.org/article/d1f6f5d9e83843909939d19148b6743c

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Nonreciprocal transport in a bilayer of MnBi2Te4 and Pt

Autor: Ye, Chen, Xie, Xiangnan, Lv3, Wenxing, Huang, Ke, Yang, Allen Jian, Jiang, Sicong, Liu, Xue, Zhu, Dapeng, Qiu, Xuepeng, Tong, Mingyu, Zhou, Tong, Hsu, Chuang-Han, Chang, Guoqing, Lin, Hsin, Li, Peisen, Yang, Kesong, Wang, Zhenyu, Jiang, Tian, Wang, Xiao Renshaw

Publikováno v: Nano Letters 22, 3 (2022)

MnBi2Te4 (MBT) is the first intrinsic magnetic topological insulator with the interaction of spin-momentum locked surface electrons and intrinsic magnetism, and it exhibits novel magnetic and topological phenomena. Recent studies suggested that the i

Externí odkaz: http://arxiv.org/abs/2202.05398

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Experimental Evidence of the Topological Surface States in Mg3Bi2 Films Grown by Molecular Beam Epitaxy

Autor: Zhou, Tong, Zhu, Xie-Gang, Tong, Mingyu, Zhang, Yun, Luo, Xue-Bing, Xie, Xiangnan, Feng, Wei, Chen, Qiuyun, Tan, Shiyong, Wang, Zhen-Yu, Jiang, Tian, Lai, Xin-Chun, Yang, Xuejun

Type-II nodal line semimetal (NLS) is a new quantum state hosting one-dimensional closed loops formed by the crossing of two bands which have the same sign in their slopes along the radial direction of the loop. According to the theoretical predictio

Externí odkaz: http://arxiv.org/abs/1906.06636

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Dimensional crossover and topological nature of the thin films of a three-dimensional topological insulator by band gap engineering

Autor: Wang, Zhenyu, Zhou, Tong, Jiang, Tian, Sun, Hongyi, Zang, Yunyi, Gong, Yan, Zhang, Jianghua, Tong, Mingyu, Xie, Xiangnan, Liu, Qihang, Chen, Chaoyu, He, Ke, Xue, Qi-Kun

Identification and control of topological phases in topological thin films offer great opportunity for fundamental research and the fabrication of topology-based devices. Here, combining molecular beam epitaxy, angle-resolved photoemission spectrosco

Externí odkaz: http://arxiv.org/abs/1905.06776

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