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Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

Autor: Wan Xu-Dong, Yang Zuo-Ya, Chen Bomy, Chen Yifeng, Xie Joseph, Liang Shuang, Xu Cheng, Feng Song-Lin, Song Zhi-Tang, Liu Bo

Publikováno v: Web of Science

A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0. 18 μm complementary metal-oxide semiconductor process technology. It shows steady switching

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6dfc5ffbd52b5bd339e861aa39be2b4f
https://doi.org/10.1088/0256-307x/25/5/088

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A Study on the Properties of Different IMP Ta, Ta(N) and Multi-Layer Ta/Ta(N) as Diffusion Barriers for Cu Metallization.

Autor: He, L., Li, C. Y., Zeng, Z. Q., Wu, J. J., Qian, Y., Zhang, Y., Liu, H. D., Xie, Joseph

Publikováno v: MRS Online Proceedings Library; 2001, Vol. 714 Issue 1, p1-7, 7p

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IMP copper seed layer formation with TaN barrier for deep submicron.

Autor: Narayanan, Babu, Li, Chao Yong, Lee, Kangsoo, Yu, Bo, Wu, Jun J., Foo, Pang Dow, Xie, Joseph

Publikováno v: Proceedings of SPIE; Nov1999, Issue 1, p42-45, 4p

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Conference

Constant current-stress-induced breakdown of reoxidized nitrided oxide (ONO) in flash memory devices.

Autor: Cha, Cher L., Chor, Eng F., Gong, H., Zhang, Alex Q., Chan, Lap H., Xie, Joseph

Publikováno v: Proceedings of SPIE; Nov1997, Issue 1, p368-375, 8p

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Conference

Plasma-induced metal sidewall undercut and its dependence on the layout geometry.

Autor: Hu, David Y., Zhang, Alex Q., Xie, Joseph, Yin, Qian, Kai, Shao

Publikováno v: Proceedings of SPIE; Nov1997, Issue 1, p117-122, 6p

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Conference

Negative bias-temperature instability study of silicon oxide and its impact on PMOS reliability.

Autor: Xie, Joseph, McBride, Michael J., Haines, Jeff C.

Publikováno v: Proceedings of SPIE; Nov1995, Issue 1, p96-101, 6p

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