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pro vyhledávání: '"Xie, Weiyu"'
Publikováno v:
Analele Stiintifice ale Universitatii Ovidius Constanta: Seria Matematica, Vol 32, Iss 1, Pp 271-304 (2024)
In this paper, we introduce the basic notions of the fractional summation, difference and q-difference with the quaternionic fractional order for the quaternion-valued functions and establish some of their basic properties. Based on this, the summati
Externí odkaz:
https://doaj.org/article/1df56a8c068549e290ecb987f76b5247
Publikováno v:
In Trends in Microbiology August 2024 32(8):728-731
Publikováno v:
In FirePhysChem December 2023 3(4):339-349
Akademický článek
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Publikováno v:
Science Bulletin 2018
In this work, our statements are based on the progress of current research on superatomic clusters. Combining the new trend of materials and device manufacture at the atomic level, we analyzed the opportunities for the development based on the use of
Externí odkaz:
http://arxiv.org/abs/1804.06280
Autor:
Zhang, Junfeng, Xie, Weiyu, Agiorgousis, Michael L., Choe, Duk-Hyun, Meunier, Vincent, Xu, Xiaohong, Zhao, Jijun, Zhang, Shengbai
Two-dimensional (2D) device structures have recently attracted considerable attention. Here, we show that most 2D device structures, regardless vertical or lateral, act as a lateral monolayer-bilayer-monolayer junction in their operation. In particul
Externí odkaz:
http://arxiv.org/abs/1801.03209
Autor:
Liang, Ying, Xia, Tian, Chang, Zhaosen, Xie, Weiyu, Li, Yongpeng, Li, Chaokun, Fan, Ruimei, Wang, Wenxin, Sui, Zhuyin, Chen, Qi
Publikováno v:
In Chemical Engineering Journal 1 June 2022 437 Part 1
Publikováno v:
In Chemical Physics 1 September 2021 549
Publikováno v:
Phys. Rev. Lett. 120, 086101 (2018)
Interest in two dimensional materials has exploded in recent years. Not only are they studied due to their novel electronic properties, such as the emergent Dirac Fermion in graphene, but also as a new paradigm in which stacking layers of distinct tw
Externí odkaz:
http://arxiv.org/abs/1611.00121
Publikováno v:
Phys. Rev. Materials 1, 063402 (2017)
Enhanced van der Waals (vdW) epitaxy of semiconductors on layered vdW substrate is identified as the formation of dative bonds. For example, despite that NbSe2 is a vdW layered material, first-principles calculations reveal that the bond strength at
Externí odkaz:
http://arxiv.org/abs/1610.07641