Zobrazeno 1 - 10
of 418
pro vyhledávání: '"Xie, S. J."'
Autor:
S., Borges H., Júnior, Celso A. N., Brandão, David S., Liu, Fujun, Pereira, V. V. R., Xie, S. J., Qu, Fanyao, Alcalde, A. M.
We report dissipative dynamics of two valley excitons residing in the $K$ and $K^\prime$-valleys of bare WSe$_2$ monolayer and the one being integrated into a bimodal optical cavity. In the former, only when the exciton-field detunings in the $K$ and
Externí odkaz:
http://arxiv.org/abs/2209.04558
Publikováno v:
2D Materials 6.4 (2019): 045014
We developed a comprehensive theoretical framework focusing on many-body effects of exciton species in monolayer WS$_2$, including bright and dark excitons, and intra- and inter-valley biexcitons, to investigate valley dynamics in monolayer WS$_2$ su
Externí odkaz:
http://arxiv.org/abs/2004.07379
Polaron formation in quasi-one-dimensional organic ferromagnets is studied based on an extended Su-Schrieffer-Heeger model combined with a Kondo term. The charge distribution of the polaron is found to be highly asymmetric under spatial reflection, d
Externí odkaz:
http://arxiv.org/abs/1305.6495
We explore the magnetoresistance (MC) effect in an organic semiconductor device based on the magnetic field related bipolaron formation. By establishing a group of dynamic equations, we present the transition among spin-parallel, spin-antiparallel po
Externí odkaz:
http://arxiv.org/abs/1203.0362
We theoretically design a graphene-based all-organic ferromagnetic semiconductor by terminating zigzag graphene nanoribbons (ZGNRs) with organic magnets. A large spin-split gap with 100% spin polarized density of states near the Fermi energy is obtai
Externí odkaz:
http://arxiv.org/abs/1007.5416
Autor:
Wang, X. R., Xie, S. J.
A universal mechanism for strong magnetic-field effects of nonmagnetic organic semiconductors is presented. A weak magnetic field (less than hundreds mT) can substantially change the charge carrier hopping coefficient between two neighboring organic
Externí odkaz:
http://arxiv.org/abs/1006.5292
Autor:
Wang, X. R., Xie, S. J.
A universal mechanism for strong magnetic-field effects of nonmagnetic organic semiconductors is presented. A weak magnetic field (less than hundreds mT) can substantially change the charge carrier hopping coefficient between two neighboring organic
Externí odkaz:
http://arxiv.org/abs/1001.1796
We investigate the bias-induced insulator-metal transition in organic electronics devices, on the basis of the Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. The insulator-metal transition is explained with t
Externí odkaz:
http://arxiv.org/abs/cond-mat/0609021
Publikováno v:
New Journal of Physics 8,82 (2006)
Combining the Su-Schrieffer-Heeger model and the non-equilibrium Green's function formalism, we investigate the negative differential resistance effect in organic spintronics at low temperature and interprete it with a self-doping picture. A giant ne
Externí odkaz:
http://arxiv.org/abs/cond-mat/0509761
The controllability of charge transport through an organic molecular spin-valve system is theoretically investigated on the basis of a Su-Schrieffer-Heeger model combined with the non-equilibrium Green's function formalism. We show how the formation
Externí odkaz:
http://arxiv.org/abs/cond-mat/0508417