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pro vyhledávání: '"Xie, Muting"'
HfO2-based ferroelectric materials are promising for the next generation of memory devices, attracting significant attention. However, their potential applications are significantly limited by fatigue and imprint phenomena, which affect device lifeti
Externí odkaz:
http://arxiv.org/abs/2407.19197
Autor:
Yu, Hongyu, deng, Shihan, Xie, Muting, Zhang, Yuwen, Shi, Xizhi, Zhong, Jianxin, He, Chaoyu, Xiang, Hongjun
Recent advancements underscore the critical need to develop ferroelectric materials compatible with silicon. We systematically explore possible ferroelectric silicon quantum films and discover a low-energy variant (hex-OR-2*2-P) with energy just 1 me
Externí odkaz:
http://arxiv.org/abs/2407.01914
Autor:
Luo, Wei, Zhong, Yang, Yu, Hongyu, Xie, Muting, Chen, Yingwei, Xiang, Hongjun, Bellaiche, Laurent
Using machine learning methods, we explore different types of domain walls in the recently unveiled single-element ferroelectric, the bismuth monolayer [Nature 617, 67 (2023)]. Remarkably, our investigation reveals that the charged domain wall config
Externí odkaz:
http://arxiv.org/abs/2308.04633