Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Xie, Chengmin"'
Autor:
Xue, Xiao, Xie, Chengmin, Qian, Guozhi, Qiu, Min, Jiang, Rongkun, Pasha, Mohsin, Shang, Minjing, Su, Yuanhai
Publikováno v:
In Chemical Engineering Science 5 February 2024 284
Publikováno v:
Advanced Science; 1/5/2024, Vol. 11 Issue 1, p1-9, 9p
Publikováno v:
In Microprocessors and Microsystems November 2016 47 Part B:486-490
Autor:
Xie, Chengmin1,2 (AUTHOR), Zhao, He1,2 (AUTHOR), Du, Lifei3 (AUTHOR), Du, Huiling3 (AUTHOR), Wu, Pingping1,2 (AUTHOR) pingpingwu-ustb@126.com
Publikováno v:
Philosophical Magazine Letters. Sep2021, Vol. 101 Issue 9, p341-352. 12p.
Akademický článek
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Publikováno v:
In Energy Procedia 2011 13:3078-3082
Publikováno v:
Microprocessors and Microsystems. 47:486-490
We implement a high-performance processor architecture based 3D on-chip cache, Using 3D integration technology.We simulate the performance of the 3D processor and 3D cache at different node, using 3D Cacti tools and theoretical algorithms.The perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb8c2152576926a5447c64c68670a56f
https://doi.org/10.1016/j.micpro.2016.07.009
https://doi.org/10.1016/j.micpro.2016.07.009
Publikováno v:
2015 16th International Conference on Electronic Packaging Technology (ICEPT).
With increased current density induced by current crowding in Through-silicon Via(TSV), the reliability problem of interconnection of 3-D IC power grid, especially the electromigration (EM), cannot be ignored. To ensure the EM current limit is not ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba98d2630d7e308b505925825658ab4d
https://doi.org/10.1109/icept.2015.7236732
https://doi.org/10.1109/icept.2015.7236732
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In this paper, analytical expressions of parasitic of tapered TSV considering the MOS effect and frequency-dependent behavior are proposed. The formulas for tapered TSV are developed from the conventional analytical equations of RLCG for two wire tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::308cfc95616d93f19dfeaf02146a2015
https://doi.org/10.1109/icsict.2014.7021675
https://doi.org/10.1109/icsict.2014.7021675
Publikováno v:
Journal of Semiconductors. 36:024009
The analytical model of voltage-controlled MOS capacitance of tapered through silicon via (TSV) is derived. To capture the frequency-dependent behavior of tapered TSV, the conventional analytical equations of RLCG for two-wire transmission lines are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2cb3a61c3c8584b3a5713047b0352392
https://doi.org/10.1088/1674-4926/36/2/024009
https://doi.org/10.1088/1674-4926/36/2/024009