Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Xiaozhu Wei"'
Autor:
Xiaozhu Wei, Shohei Kumagai, Tatsuyuki Makita, Kotaro Tsuzuku, Akifumi Yamamura, Mari Sasaki, Shun Watanabe, Jun Takeya
Publikováno v:
Communications Materials, Vol 4, Iss 1, Pp 1-9 (2023)
Solution-processable organic thin-film transistors are needed for device applications. Here, solution-processed organic semiconductors and amorphous metal oxide semiconductors are integrated into a transistor, with five-stage complementary ring oscil
Externí odkaz:
https://doaj.org/article/81d5953405104db5b8c0298a1f94a9b9
Publikováno v:
AIP Advances, Vol 11, Iss 3, Pp 035027-035027-5 (2021)
Solution-processed amorphous metal oxide semiconductors (AOSs) are promising candidates for printed electronics. However, process durability and bias stress instability issues still hinder their practical applications. Here, a poly(methyl methacrylat
Externí odkaz:
https://doaj.org/article/6288b1af80394cdbbe63a05c2bd84334
Autor:
Kotaro Tsuzuku, Xiaozhu Wei, Jun Takeya, Mari Sasaki, Akifumi Yamamura, Tatsuyuki Makita, Shohei Kumagai, Shun Watanabe
Solution-processed single-crystal organic semiconductors (OSCs) and amorphous metal oxide semiconductors (MOSs) are promising for high-mobility, p- and n-channel thin-film transistors (TFTs), respectively. Organic−inorganic hybrid complementary cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9573df06400649501f85f5fba8c6c0ae
https://doi.org/10.21203/rs.3.rs-883006/v1
https://doi.org/10.21203/rs.3.rs-883006/v1
Autor:
Shohei Kumagai, Jun Takeya, Xiaozhu Wei, Shun Watanabe, Kotaro Tsuzuku, Tatsuyuki Makita, Akifumi Yamamura, Mari Sasaki
Printed electronics offer a cost-efficient way to realise flexible electronic devices. The combined use of p-type and n-type semiconductors would yield silicon-like integrated circuits with low power consumption and stability. However, printing compl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32530e1b8bfd04a9228f9648f84d80c9
https://doi.org/10.21203/rs.3.rs-275079/v1
https://doi.org/10.21203/rs.3.rs-275079/v1
Autor:
Shohei Kumagai, Shun Watanabe, Akifumi Yamamura, Jun Takeya, Kotaro Tsuzuku, Xiaozhu Wei, Mari Sasaki, Tatsuyuki Makita
Publikováno v:
Flexible and Printed Electronics. 5:015003
Complementary metal-oxide-semiconductor, an elementary building block, allows for a high degree of implementation of logic circuits with relatively low power consumption and low manufacturing cost, which plays a vital role not only in current Si elec
Publikováno v:
Desalination. 352:18-26
In this study, in order to reduce the impact of reverse osmosis concentrate (ROC) on the receiving body of water and/or improve the recovery rate of reverse osmosis (RO) system by reusing the treated ROC as a feeding, a powdered activated carbon (PAC
Publikováno v:
Materials Chemistry and Physics. 145:269-273
A high electrocatalytic activity of RuO2 has been found for oxygen reduction reaction (ORR) in the cathode of direct borohydride fuel cells (DBFCs). The electron transfer number n during the ORR changes from 3.58 to 3.86 and the percentage of the int
Publikováno v:
Journal of Power Sources. 234:272-276
Direct methanol fuel cells (DMFCs) are a promising power source for mobile devices. However, DMFCs currently experience the technical shortcomings of high cost due to the use of noble metal catalysts and polymer electrolyte membranes (PEMs), low powe
Publikováno v:
International Journal of Hydrogen Energy. 38:2884-2888
The ultrafine amorphous Co–W–B alloy has been synthesized by chemical reduction and used as anode catalyst in direct borohydride fuel cell. The results show that the maximum power output of the cell is 101 mW cm−2 at 15 °C, and the essential p
Autor:
Xiaozhu Wei, Yoko Shibasaki
Publikováno v:
2016 IEEE 66th Electronic Components and Technology Conference (ECTC).
A new dry-film photosensitive dielectric material (PDM) named PDM-1 with low curing temperature (180°C) has been developed. The lithographic process evolves exposure equipment widely used in solder resist process, which make this PDM-based fine patt