Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Xiaowan Qin"'
Autor:
Tianqi Gao, Lang Zeng, Deming Zhang, Xiaowan Qin, Mingzhi Long, Yue Zhang, Xiaoyang Lin, Youguang Zhang, Weisheng Zhao
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 245-249 (2018)
Since Internet of Things devices should ideally be self-powered, there is great demand for devices with ultra-low operating voltages that can run on energy harvested from a noisy environment. In this paper, a novel all spin logic (ASL) device with vo
Externí odkaz:
https://doaj.org/article/ac38abce86c34c96963bd8e7dfaa34e3
Autor:
Xiaowan Qin, Keming Peng
Publikováno v:
International Journal of Translation, Interpretation, and Applied Linguistics. 5:1-6
The field of corpus-based translation studies (CBTS) relies on corpus-linguistic methods and tools to analyze electronic corpora of authentic translations. Since its emergence in the early 1990s under the impetus of Mona Baker, CBTS has grown to beco
Autor:
Keming Peng, Xiaowan Qin
Publikováno v:
Learning Technologies and Systems ISBN: 9783031330223
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0df81ad235b436c5532ee89bde3d7de
https://doi.org/10.1007/978-3-031-33023-0_34
https://doi.org/10.1007/978-3-031-33023-0_34
Autor:
Xiaowan Qin, Weisheng Zhao, Tianqi Gao, Mingzhi Long, Lang Zeng, Youguang Zhang, Deming Zhang
Publikováno v:
IEEE Transactions on Nanotechnology. 17:492-499
Currently, commercial semiconductor-based memories face the problem of static energy consumption caused by leakage currents. Magnetoelectric random access memory (MeRAM), as a type of nonvolatile memory, provides a solution to this problem and can be
Autor:
Weisheng Zhao, Xiaowan Qin, Xiaoyang Lin, Deming Zhang, Yue Zhang, Lang Zeng, Mingzhi Long, Tianqi Gao, Youguang Zhang
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 245-249 (2018)
Since Internet of Things devices should ideally be self-powered, there is great demand for devices with ultra-low operating voltages that can run on energy harvested from a noisy environment. In this paper, a novel all spin logic (ASL) device with vo
Autor:
Fanghui Gong, Xiaowan Qin, Kang L. Wang, Mingzhi Long, Weisheng Zhao, Youguang Zhang, Deming Zhang, Shouzhong Peng, Lezhi Wang, Lang Zeng, Tianqi Gao
Publikováno v:
IEEE Transactions on Electron Devices. 64:4919-4927
The high current density required by magnetic tunneling junction (MTJ) switching driven by the spin transfer torque (STT) effect leads to large power consumption and severe reliability issues, hindering the timetable for STT magnetic random access me
Autor:
Weisheng Zhao, Youguang Zhang, Tianqi Gao, Xiaowan Qin, Jacques-Olivier Klein, Lang Zeng, Yue Zhang, Deming Zhang, Wang Kang, Fanghui Gong
Publikováno v:
IEEE Transactions on Magnetics. 53:1-5
Benefitting from its non-volatility, low power, high speed, nearly infinite endurance, good scalability, and great CMOS compatibility, magnetic tunnel junction (MTJ) embedded in conventional CMOS logic circuits has been proposed as one potentially po
Autor:
Xiaowan Qin, Youguang Zhang, Deming Zhang, Mingzhi Long, Weisheng Zhao, Fanghui Gong, Tianqi Gao, Lang Zeng
Publikováno v:
IEEE Transactions on Electron Devices. 64:2999-3006
The making use of 2-D material as transistor channel is a rapid growth field since it can provide enough gate controllability for transistors at scaling limit. Among all kinds of 2-D materials, monolayer MoS2 stands out because of its large intrinsic
Autor:
Weisheng Zhao, Youguang Zhang, Lang Zeng, Tianqi Gao, Deming Zhang, Xiaowan Qin, Mingzhi Long
Publikováno v:
2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In this paper, we propose an all spin logic device with voltage controlled magnetic anisotropy (VCMA-ASL) and employ negative capacitance (NC) effect as a novel approach to amplify the VCMA effect. A new working strategy of 3-step operation scheme ha
Autor:
Xiaowan Qin, Youguang Zhang, Lang Zeng, Weisheng Zhao, Deming Zhang, Mingzhi Long, Tianqi Gao
Publikováno v:
NANOARCH
In this work, novel magnetic memory device is proposed based on fascinating Spin Momentum Locking (SML) materials. The device utilizes direct spin current to charge current conversion and don't need Magnetic Tunneling Junction (MTJ) structure. The NO