Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Xiaoshuo Zhu"'
Publikováno v:
Applied Sciences, Vol 14, Iss 13, p 5942 (2024)
The intensive quenching process compared to traditional methods results in a lower quenching cracking tendency. The comprehensive mechanical properties of an intensive quenching workpiece has good advantages. In order to improve the performance and p
Externí odkaz:
https://doaj.org/article/414bb73a87124a589c13773b264cda6b
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045225-045225-7 (2020)
Graphene’s Dirac point in the band structure and no current switching ratio make it hard to be used in sophisticated logic circuits. The graphene/MoS2 heterojunction, which opens the Dirac point of graphene, can solve this problem. Based on the fir
Externí odkaz:
https://doaj.org/article/e2717c4e02a74970be3a503ac74e8b31
Autor:
Qi Zhang, Yudong Fu, Xiaoshuo Zhu, Qiaobai He, Guotan Liu, Liu Guanqi, Zhihao Huang, Junfeng Wang
Publikováno v:
Materials
Volume 14
Issue 18
Materials, Vol 14, Iss 5319, p 5319 (2021)
Volume 14
Issue 18
Materials, Vol 14, Iss 5319, p 5319 (2021)
In this study, the high-temperature oxidation behavior of a series of AlTiNiCuCox high-entropy alloys (HEAs) was explored. The AlTiNiCuCox (x = 0.5, 0.75, 1.0, 1.25, 1.5) series HEAs were prepared using a vacuum induction melting furnace, in which th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9450e9289dedbc3ca6668806fe1866be
https://doi.org/10.3390/ma14185319
https://doi.org/10.3390/ma14185319
Effect of Deformation on the Microstructure of Cold-Rolled TA2 Alloy after Low-Temperature Nitriding
Publikováno v:
Coatings, Vol 11, Iss 1011, p 1011 (2021)
Coatings
Volume 11
Issue 8
Coatings
Volume 11
Issue 8
In order to improve the low hardness and poor wear resistance of TA2, this paper proposes a composite process of cold-rolling and low-temperature plasma nitriding with recrystallization. This composite modification process can effectively achieve the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0b674f80dbebcc82f15313279272d786
https://doi.org/10.3390/coatings11081011
https://doi.org/10.3390/coatings11081011
Publikováno v:
Solid State Communications. :114366
Monolayer graphene has a zero band gap, and monolayer MoS2 has a direct band gap of 1.80 eV. In the form of van der Waals heterostructure, the combination can open the Dirac point of graphene. In this paper, the graphene/MoS2 heterojunctions were dop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0cc8c8bd2105bb35ba5c8326ddf5d50
https://doi.org/10.1016/j.ssc.2021.114366
https://doi.org/10.1016/j.ssc.2021.114366
Publikováno v:
AIP Advances, Vol 10, Iss 4, Pp 045225-045225-7 (2020)
Graphene’s Dirac point in the band structure and no current switching ratio make it hard to be used in sophisticated logic circuits. The graphene/MoS2 heterojunction, which opens the Dirac point of graphene, can solve this problem. Based on the fir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::89973a3369b162c80cbc996916fd9f25
https://doaj.org/article/e2717c4e02a74970be3a503ac74e8b31
https://doaj.org/article/e2717c4e02a74970be3a503ac74e8b31