Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Xiaosai Jing"'
Autor:
Waner He, Wenchao Xu, Huixin He, Xiaosai Jing, Chuan Liu, Jiajun Feng, Chunlai Luo, Zhen Fan, Sujuan Wu, Jinwei Gao, Guofu Zhou, Xubing Lu, Junming Liu
Publikováno v:
Advanced Electronic Materials, Vol 6, Iss 4, Pp n/a-n/a (2020)
Abstract Write‐once‐read‐many (WORM) memory behavior is often observed in polymer electret memory (PEM) devices, greatly limiting their overall performance. This paper systematically investigates the device physics of PEM devices with poly(α
Externí odkaz:
https://doaj.org/article/b22c2f466a504089b8033dfad987c625
Autor:
Sujuan Wu, Waner He, Jun-Ming Liu, Guofu Zhou, Jiajun Feng, Xubing Lu, Wenchao Xu, Huixin He, Zhen Fan, Chunlai Luo, Chuan Liu, Jinwei Gao, Xiaosai Jing
Publikováno v:
Advanced Electronic Materials. 6:1901320
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f408f1406ee53220fab0d1380588a4
https://doi.org/10.1002/aelm.201901320
https://doi.org/10.1002/aelm.201901320
Autor:
J.-M. Liu, Zongbao Zhang, Jinwei Gao, Xiaosai Jing, Xubing Lu, S. J. Wu, Wenchao Xu, Huixin He, X. S. Gao, G. F. Zhou
Publikováno v:
Applied Physics Letters. 111:063302
In this work, we fabricated a high performance flash-type organic nonvolatile memory transistor, which adopted polymer-electret poly(α-methylstyrene) (PαMS) and HfO2 films as hybrid charge trapping layer (CTL). Compared with a single HfO2 or PαMS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7bafcf6114c448ad7a6490de22feee9d
https://doi.org/10.1063/1.4997748
https://doi.org/10.1063/1.4997748
Autor:
J.-M. Liu, Min Zeng, Xiaosai Jing, Jinwei Gao, Cheng Yang, Wenchao Xu, Minghui Qin, Aihua Zhang, Xingsen Gao, Guofu Zhou, Yanping Zeng, Jiajun Feng, Zhen Fan, Xubing Lu
Publikováno v:
Applied Physics Letters. 110:182903
The electrical conductivity, charge transport behavior, and ferroelectricity of epitaxial BaNbxTi1-xO3 films (BNTO, 0.0 ≤ x ≤ 0.5) prepared by pulsed laser deposition are investigated. It is found that Nb-doping can tune the conventional insulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b78a8e8eebe73d3e732403d840a8b809
https://doi.org/10.1063/1.4982655
https://doi.org/10.1063/1.4982655
Autor:
J.-M. Liu, Ming Li, Jinwei Gao, Min Zeng, Xubing Lu, Xiaosai Jing, Marin Alexe, Xingsen Gao, Zhang Zhang, Sujuan Wu, Jian Zhou
Publikováno v:
Advanced Electronic Materials. 1:1500069
In this work, the observations of different resistive switching polarities of epitaxial BaTiO3 (BTO) thin films fabricated by pulsed laser deposition are reported. The BTO films with various ferroelectric states and oxygen vacancy (VO) concentrations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97442328b0593440f92a2273921f78b4
https://doi.org/10.1002/aelm.201500069
https://doi.org/10.1002/aelm.201500069
Autor:
Xiaosai Jing, Wenchao Xu, Cheng Yang, Jiajun Feng, Aihua Zhang, Yanping Zeng, Minghui Qin, Min Zeng, Zhen Fan, Jinwei Gao, Xingsen Gao, Guofu Zhou, Xubing Lu, Liu, J. M.
Publikováno v:
Applied Physics Letters; 5/1/2017, Vol. 110 Issue 18, p1-5, 5p, 5 Graphs
Autor:
Jian Zhou, Xiaosai Jing, Marin Alexe, Jiyan Dai, Minghui Qin, Sujuan Wu, Min Zeng, Jinwei Gao, Xubing Lu, J-M Liu
Publikováno v:
Journal of Physics D: Applied Physics; 5/5/2016, Vol. 49 Issue 17, p1-1, 1p