Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Xiaokuo Er"'
Publikováno v:
Journal of Materiomics, Vol 8, Iss 2, Pp 375-381 (2022)
Advances in flexible electronics are driving dielectric capacitors with high energy storage density toward flexibility and miniaturization. In the present work, an all-inorganic thin film dielectric capacitor with the coexistence of ferroelectric (FE
Externí odkaz:
https://doaj.org/article/59ff78d34e2645ee8b102968fb4b633f
Publikováno v:
Journal of the European Ceramic Society. 43:4008-4014
Publikováno v:
Journal of the European Ceramic Society. 42:7441-7447
Publikováno v:
Journal of Materiomics, Vol 8, Iss 2, Pp 375-381 (2022)
Advances in flexible electronics are driving dielectric capacitors with high energy storage density toward flexibility and miniaturization. In the present work, an all-inorganic thin film dielectric capacitor with the coexistence of ferroelectric (FE
Autor:
Pingping Liu, Qinghua Ma, Qian Zhan, Hongliang Wang, Jinxing Zhang, Fei Shao, Sizhe Diao, Xiaokuo Er
Publikováno v:
Journal of the European Ceramic Society. 41:5512-5518
The integration units with functional and structural material components have been developed largely recently. In the present study, 200 nm-thick polycrystalline PbZr0.52Ti0.48O3 (PZT) films with a dense columnar structure were grown on LaNiO3 (LNO)
Publikováno v:
Ceramics International. 47:9252-9257
PbZr0.52Ti0.48O3 (PZT) tetragonal ferroelectric films have been fabricated on flexible mica and rigid silicon substrates respectively with a bottom electrode of LaNiO3 (LNO) films via a low-cost sol-gel process. The microstructure and ferroelectric p
Publikováno v:
ACS Applied Electronic Materials. 2:4127-4133
A large number of applications involving ferroelectric materials are substantially influenced by domain walls (DWs). Especially, charged DWs (CDWs) show great potentials in controlling the switchin...
Autor:
Hongliang Wang, Qian Zhan, Chuanshou Wang, Yupeng Yin, Yuelin Zhang, Xiaokuo Er, Jinxing Zhang
Publikováno v:
Materials Characterization. 154:395-399
Layered-perovskite oxide thin films provide new opportunities to design next-generation electronic devices with their special structure and potentially excellent electrical properties. The microstructure and domain structure in epitaxial Bi2WO6 (BWO)
Publikováno v:
Journal of Sol-Gel Science and Technology. 86:505-512
In this study, Pb1−xLax(Zr0.52Ti0.48)O3/LaNiO3 (PLZT/LNO) heterostructures with different doping contents of La (x = 0.02–0.15) were prepared on a Si substrate by sol–gel process. First, the effects of the La doping content on the crystal struc
Autor:
Ying-Hao Chu, Qinghua Zhang, Hongliang Wang, Xiaokuo Er, Ping Chun Wu, Farong Wan, Lin Gu, Qian Zhan
Publikováno v:
Materials Characterization. 169:110597
Heterointerface engineering has been attracting extensive scientific attention for novel interfacial properties and functionalities. In this study, artificial oxide superlattices are fabricated by inserting 5d transition-metal oxides SrIrO3 to ferrom