Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Xiaojuen Yuan"'
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 44:816-822
Berenger's perfectly matched layer (PML) absorbing boundary condition for electromagnetic (EM) waves is derived to absorb 2-D and 3-D acoustic waves in finite difference time domain (FDTD) simulation of acoustic wave propagation and scattering. A PML
Publikováno v:
IEEE transactions on ultrasonics, ferroelectrics, and frequency control. 46(1)
We present a method to incorporate the relaxation dominated attenuation into the finite-difference time-domain (FDTD) simulation of acoustic wave propagation in complex media. A dispersive perfectly matched layer (DPML) boundary condition, which is s
Publikováno v:
Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004..
This paper describes the challenges of designing RF integrated circuits using the advanced RFCMOS technology. Following an overview of the RFCMOS process, design challenges for low cost, high performance RFICs and their integration issues are discuss
Publikováno v:
Proceedings. Design, Automation and Test in Europe Conference and Exhibition.
Publikováno v:
2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002..
The integration level of RFICs has exhibited considerable progress during the last decade. Si-based single-chip GSM, Bluetooth and DECT transceivers have been reported, while the most exciting milestone for integration will be the RF-system-on-a-chip
Publikováno v:
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003.
The design and modeling of a high Q hairpin inductor is presented. The inductor is designed and fabricated using the thick top-level metal (4/spl mu/m thickness, 14/spl mu/m away from the substrate) in an IBM 0.5/spl mu/m SiGe BiCMOS process to provi
Autor:
A. Senior, J. Blonski, Xiaojuen Yuan, Donald Y.C. Lie, D. Harame, J. Mecke, Lawrence E. Larson, Mahesh Kumar, J. Gross, Y. Chen, A. Poh
Publikováno v:
2002 3rd International Conference on Microwave and Millimeter Wave Technology, 2002. Proceedings. ICMMT 2002..
The RF linearity characteristics of a 0.2 /spl mu/m/120 GHz f/sub T/ silicon germanium (SiGe) heterojunction bipolar transistor (HBT) are analyzed using a simplified VBIC model. This model is verified using on-wafer two-tone tests. The study shows th
Autor:
D. Livezey, T. Beukema, Xiaojuen Yuan, J. Blonski, Donald Y.C. Lie, Lawrence E. Larson, B. Yang, C. Saint, P. Pawlowski, N. Sornin, H. Zamat, N. Swanberg, J. Kennedy, A. Senior, D. Gonya, T. Robinson
Publikováno v:
2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium. Digest of Papers (Cat. No.02CH37280).
A W-CDMA direct-conversion front-end receiver chip consisting of a low-noise amplifier (LNA), a dual-gain RF variable-gain amplifier (RF-VGA), two direct-down-conversion mixers, a I/Q quadrature generator, and a base-band five-gain-stage VGA is desig
Autor:
X. Wang, A. Senior, T. Robinson, Xiaojuen Yuan, Donald Y.C. Lie, Lawrence E. Larson, J. Mecke
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
A 3.4-4.6 GHz fully monolithic voltage-controlled Oscillator (VCO) was designed and manufactured using Silicon Germanium (SiGe) BiCMOS technology. The large tuning range (33%) and low-phase noise: (-108 dBc/Hz @100 kHz offset at 3.4 GHz) are achieved
Publikováno v:
IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, 2003; 2003, p547-550, 4p