Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Xiao-Ran Cui"'
Publikováno v:
Annals of Medicine, Vol 56, Iss 1 (2024)
AbstractObjective Atrial fibrillation (AF), the most common cardiac arrhythmia, presents significant health challenges, and the intricate connection between insomnia and AF has garnered substantial attention. This cohort study aims to investigate the
Externí odkaz:
https://doaj.org/article/301de8efe9914f9fae8ffeb53e51d5a2
Autor:
Rui-bin Li, Xiao-hong Yang, Ji-dong Zhang, Dong Wang, Xiao-ran Cui, Long Bai, Lei Zhao, Wei Cui
Publikováno v:
Frontiers in Cardiovascular Medicine, Vol 9 (2022)
ObjectiveThe aim of this study was to evaluate the association between subclinical thyroid dysfunction and the recurrence of atrial fibrillation (AF) after radiofrequency catheter ablation (RFCA).MethodsWe examined the association between subclinical
Externí odkaz:
https://doaj.org/article/3c99afae80ef4c6b9913233529879bbb
Publikováno v:
Clinical and Applied Thrombosis/Hemostasis, Vol 28 (2022)
Objective To investigate the efficacy and safety of the antithrombotic therapy using the oral anticoagulant rivaroxaban and clopidogrel in Chinese patients with acute coronary syndrome complicated with atrial fibrillation after percutaneous coronary
Externí odkaz:
https://doaj.org/article/a3a9f5d27f0e4f55adbc683ccdfe8308
Compared efficacy of clopidogrel and ticagrelor in treating acute coronary syndrome: a meta-analysis
Publikováno v:
BMC Cardiovascular Disorders, Vol 18, Iss 1, Pp 1-7 (2018)
Abstract Background & Aims Ticagrelor has been acknowledged as a new oral antagonist of P2Y12-adenosine diphosphate receptor, as a strategy with more rapid onset as well as more significant platelet inhibition function in acute coronary syndrome (ACS
Externí odkaz:
https://doaj.org/article/e4149c516f644d21ad4e61dd171045a6
Autor:
Xiang-Bin Su, Ying Ding, Ben Ma, Ke-Lu Zhang, Ze-Sheng Chen, Jing-Lun Li, Xiao-Ran Cui, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Abstract The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot la
Externí odkaz:
https://doaj.org/article/fe7c372d63104f22a983cdd056c5a376
Publikováno v:
Cardiovasc J Afr
The objective was to investigate and evaluate the short-term efficacy and safety of levosimendan in patients with chronic systolic heart failure. Forty-nine patients with chronic systolic heart failure during acute decompensation were randomly divide
Autor:
Jidong Zhang, Xiao-Ran Cui, Rui-Bin Li, Min Jia, Long Bai, Xiaohong Yang, Lei Zhao, Dong Wang
Publikováno v:
BMC Cardiovascular Disorders
BMC Cardiovascular Disorders, Vol 21, Iss 1, Pp 1-11 (2021)
BMC Cardiovascular Disorders, Vol 21, Iss 1, Pp 1-11 (2021)
Background The primary aim was to observe the predictive value of P-wave ECG index and left atrial appendage volume (LLAV) for atrial fibrillation recurrence after first radiofrequency catheter ablation. Methods A total of 196 patients with paroxysma
Autor:
Yuming Zhang, Zhichuan Niu, Xiao-Ran Cui, Jing Zhang, Hongliang Lv, Yimen Zhang, Shizheng Yang, Haiqiao Ni
Publikováno v:
Chinese Physics B. 28:118102
The InAs/AlSb heterostructures with step-graded GaAs x Sb1 − x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAs x Sb1 − x metamorphic buffer layers are used to relax the strain and block
Autor:
Ke-Lu Zhang, Xiao-Ran Cui, Haiqiao Ni, Yingqiang Xu, Zhichuan Niu, Jing-Lun Li, Ding Ying, Su Xiangbin, Ben Ma, Ze-Sheng Chen
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Nanoscale Research Letters
Nanoscale Research Letters
The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with
Autor:
Jing Zhang, Xiao-Ran Cui, Hongliang Lv, Shizheng Yang, Haiqiao Ni, Yuming Zhang, Zhichuan Niu, Yimen Zhang
Publikováno v:
Chinese Physics B. 28:028101
The growth of the InAs film directly on the Si substrate deflected from the plane (100) at 4° towards (110) has been performed using a two-step procedure. The effect of the growth and annealing temperature on the electron mobility and surface topogr