Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Xiao Wei Gan"'
Publikováno v:
Advanced Materials Research. :1149-1152
With low-k dielectric materials taking the place of oxide dielectrics as the primary dielectric materials, the low-k dielectric materials and interconnection Cu metals during Chemical Mechanical Planarization (CMP) is becoming a critical surface qual
Publikováno v:
Advanced Materials Research. :1145-1148
With the microelectronic technology node moves down to 45 nm and beyond, and to reduce the RC delay time, low-k dielectric materials have been used to replace regular dielectric materials. Therefore, the down force of chemical mechanical planarizatio
Publikováno v:
Advanced Materials Research. :3020-3023
Chemical mechanical polishing (CMP) of Cu pattern wafer based alkaline slurry in GLSI with R(NH2)n as complexing agent was investigated. In Cu CMP procedure, it is necessary to minimize the surface dishing and erosion while maintaining good planarity
Autor:
Yu Ling Liu, Rui Shi, Xiao Wei Gan, Xin Huan Niu, Jia Xi Wang, Yan Gang He, Bai Mei Tan, Ming Sun
Publikováno v:
Advanced Materials Research. :2275-2278
Chemical mechanical planarization (CMP) of Cu pattern wafer based alkaline Cu slurry in GLSI was investigated. The performance of Cu removal rate and dishing condition were discussed in this paper. Different formation of alkali CMP slurry (Cu1 and Cu