Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Xiao Tianjin"'
Publikováno v:
2015 China Semiconductor Technology International Conference.
Continued scaling of the gate dielectric has driven the adoption of high-k materials for the gate stack. A key challenge for enabling the adoption of these high-k materials is providing a SiO2/SiON interfacial layer in a controlled and repeatable man
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45365aa1a86b51b5b8aaca5e427a29be
https://doi.org/10.1109/cstic.2015.7153410
https://doi.org/10.1109/cstic.2015.7153410
Autor:
Albert Pang, Fang Jingxun, Jing Xubin, Cao Wenjie, He Zhibin, Liu Wei, Qiu Yuming, Yu Deqin, Xiao Tianjin
Publikováno v:
2015 China Semiconductor Technology International Conference.
For 40nm technology node, the Nickel Silicide process is widely used due to advantages such as low silicon consumption and low stress. In the meantime, a pre-amorphous implantation is necessary for Nickel Silicide formation to eliminate dislocations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b84c60568c7c797bbb28d95606cac78
https://doi.org/10.1109/cstic.2015.7153336
https://doi.org/10.1109/cstic.2015.7153336