Zobrazeno 1 - 10
of 196
pro vyhledávání: '"Xiao Bao Yang"'
Publikováno v:
International Journal of Hydrogen Energy. 48:18375-18384
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b39a66cc0b8486c6c186b15997c77dc
https://doi.org/10.1016/j.ijhydene.2023.01.273
https://doi.org/10.1016/j.ijhydene.2023.01.273
Publikováno v:
New Journal of Physics, Vol 24, Iss 4, p 043033 (2022)
The magnetic topological van der Waals materials family MnBi _2 Te _4 /(Bi _2 Te _3 ) _n have drawn markedly attention due to their novel multiple topological phases in different magnetic configurations. Recently, their close relative, the MnSb _4 Te
Externí odkaz:
https://doaj.org/article/33ec9f04b7b9460bb0e85669493eff4e
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-6 (2017)
Abstract An effective indexing scheme for clusters that enables fast structure comparison and congruence check is desperately desirable in the field of mathematics, artificial intelligence, materials science, etc. Here we introduce the concept of min
Externí odkaz:
https://doaj.org/article/552d477d692b4d079a48263d43a0fab2
Autor:
Hai-Shan Zhang, Lin Shi, Zheng-Hui Liu, Geng-Zhao Xu, Wen-Tao Song, Ya-Kun Wang, Zhong-Jie Xu, Xiao-Bao Yang, Yu-Jun Zhao, Xue-Lin Yang, Bo Shen, Lin-Wang Wang, Ke Xu
Publikováno v:
Journal of Materials Chemistry C. 10:13191-13200
We simulate the time-resolved decay process of the yellow band in GaN based on the first principles, and the simulated decay lifetimes are confirmed in our experiments.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70bc5ef1ba112939711f4fba09db7c10
https://doi.org/10.1039/d2tc02164a
https://doi.org/10.1039/d2tc02164a
Analysis of Transition Path Ensemble in the Exactly Solvable Models via Overdamped Langevin Equation
Transition of a system between two states is an important but difficult problem in natural science. In this article we study the transition problem in the framework of transition path ensemble. Using the overdamped Langevin method, we introduce the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6725b5e94cbc0c655a6f34bddb76895
http://arxiv.org/abs/2212.02702
http://arxiv.org/abs/2212.02702
Autor:
De-Zhang Li, Xiao-Bao Yang
Efficient numerical algorithm for stochastic differential equation has been an important object in the research of statistical physics and mathematics for a long time. In this paper we study the highly accurate numerical algorithm of the overdamped L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::420b39484fd2c9d467dbcc3b203c78da
http://arxiv.org/abs/2211.14027
http://arxiv.org/abs/2211.14027
Publikováno v:
AIP Advances, Vol 7, Iss 9, Pp 095023-095023-7 (2017)
In this paper, we have constructed the alloy configurations of Mg28-nAln by replacing atoms at various possible positions, starting from the stable structures of Mg28 and Al28 clusters. According to the symmetry of the cluster structure, the isomers
Externí odkaz:
https://doaj.org/article/165e057527d04b1089b8d5bca59a647b
Publikováno v:
Nanoscale. 14(35)
The first metallic glass of Au-Si alloy has been discovered for over half a century, but its atomic structure is still puzzling. Herein, Au 8 Si dodecahedrons with local five-fold symmetry are revealed as building blocks in Au-Si metallic glass, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e1881e3c03c690c7787732f0dd264b1
https://pubmed.ncbi.nlm.nih.gov/36004432
https://pubmed.ncbi.nlm.nih.gov/36004432
Publikováno v:
AIP Advances, Vol 6, Iss 12, Pp 125112-125112-8 (2016)
Based on ab initio molecular dynamic simulations, we have theoretically investigated the structural stabilities and electronic properties of X22H28 (X=C, Si, and Ge) nanocrystals, as a function of temperature with consideration of vibrational entropy
Externí odkaz:
https://doaj.org/article/c133dbeda7244a3c8c61ffdd0606d053
Publikováno v:
The Journal of Physical Chemistry C. 125:7077-7085
In2O3 is of particular interest as a wide-gap transparent semiconductor oxide, in which the shallow donor defect of the oxygen vacancy plays an important role in electronic properties. Herein, we f...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4a99ad274ea9776664b334f5c463cde
https://doi.org/10.1021/acs.jpcc.1c01462
https://doi.org/10.1021/acs.jpcc.1c01462