Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Xianyu Tong"'
Publikováno v:
IEEE Access, Vol 7, Pp 149255-149261 (2019)
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the substrate noise, which can lead to changes in effect of single event transient (SET). In outer space, collision of cosmic energetic particles with sensitive node
Externí odkaz:
https://doaj.org/article/ef90701d9a2040d392fa850c26dd764e
Publikováno v:
AIP Advances, Vol 9, Iss 5, Pp 055324-055324-7 (2019)
As a newly emerged form of two-dimensional material, tin dichalcogenides have attracted considerable interest, and building van der Waals (vdW) heterostructures based on them could open up new applications. Here, six vdW heterostructures based on SnS
Externí odkaz:
https://doaj.org/article/839f0dadd7fe46d39be3063a3fc5b23f
Publikováno v:
IEEE Access. 7:149255-149261
In triple-well PMOSFET transistor, a deep n+ well (DNW) is a process used to isolate the substrate noise, which can lead to changes in effect of single event transient (SET). In outer space, collision of cosmic energetic particles with sensitive node
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::206188920029200a0b297cd293c50f23
https://doi.org/10.1109/access.2019.2946213
https://doi.org/10.1109/access.2019.2946213
Publikováno v:
SID Symposium Digest of Technical Papers. 49:1231-1234
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76a53c9dffde1c54ced0809e80dcb267
https://doi.org/10.1002/sdtp.12132
https://doi.org/10.1002/sdtp.12132
Publikováno v:
AIP Advances, Vol 9, Iss 5, Pp 055324-055324-7 (2019)
As a newly emerged form of two-dimensional material, tin dichalcogenides have attracted considerable interest, and building van der Waals (vdW) heterostructures based on them could open up new applications. Here, six vdW heterostructures based on SnS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5fb3171a36b5eb4b4f779a76333a648
https://doi.org/10.1063/1.5091705
https://doi.org/10.1063/1.5091705
Publikováno v:
Science Discovery. 7:188
Two-dimensional layered materials exhibit exotic optical, electrical and thermoelectric properties, which have drawn worldwide attention in the past decade. As a novel kind of two-dimensional semiconductor, monolayer Germanium Arsenide (GeAs) can be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebd6967dd5719219cc3d88d9b1c00217
https://doi.org/10.11648/j.sd.20190704.11
https://doi.org/10.11648/j.sd.20190704.11