Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Xianwen Cui"'
Publikováno v:
IEEE Access, Vol 12, Pp 90525-90534 (2024)
Wide-band gap semiconductor devices based on GaN materials, such as high electron mobility transistors (HEMT), are gradually replacing traditional Si devices in industrial applications owing to their excellent electrothermal properties. Nonetheless,
Externí odkaz:
https://doaj.org/article/b3505bdca05244bf93d371a4a4b78328
Autor:
Hongyu Zhou, Rui Guo, Maokun Li, Fan Yang, Shenheng Xu, Maoshan Chen, Yongtao Wang, Deqiang Tao, Zuzhi Hu, Xianwen Cui, Qinian Wang, Jiangbo Zhu, Suhe Huang
Publikováno v:
IEEE Transactions on Geoscience and Remote Sensing. 61:1-14
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fed8cea0533fc04d55c62b0316e8f6f7
https://doi.org/10.1109/tgrs.2023.3245589
https://doi.org/10.1109/tgrs.2023.3245589