Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Xianjin Feng"'
Publikováno v:
Ceramics International. 48:4312-4317
Publikováno v:
Functional Materials Letters. 15
Cubic Zn2TiO4 films were deposited on MgO (111) single crystal substrates using pulsed laser deposition (PLD). With the assistance of post-annealing process, the best epitaxial Zn2TiO4 film with only (111) single plane was obtained at 950[Formula: se
Publikováno v:
Ceramics International. 46:17295-17299
We had found for the first time that short-time UV-ozone treatment can effectively regulate the electrical properties of sputtered InAlZnO (IAZO) films, and we successfully prepared high performance IAZO thin film transistors (TFTs) without thermal a
Autor:
Yu Zhang, Yuanhua Sang, Hong Liu, Lin Han, Xianjin Feng, Jianfeng Jiang, Aizhu Wang, Hao Ji, Jinbo Pang, Jiazhi Duan
Publikováno v:
ACS Applied Electronic Materials. 2:2132-2140
Electrical stability and field-effect mobility of two-dimensional (2D) material-based field-effect transistors (FETs) are extremely important for practical electronic applications. Interface scatte...
Publikováno v:
Ceramics International. 46:4568-4572
Gallium oxide (Ga2O3) films have been deposited on SrTiO3 (100) substrates by using the metal-organic chemical vapor deposition (MOCVD) method. Post-deposition annealing was performed at different temperatures. XRD θ-2θ scans displayed that the ann
Publikováno v:
Journal of the American Ceramic Society. 103:2555-2561
Publikováno v:
IEEE Transactions on Electron Devices. 66:4193-4197
Ta-doped TiO2 (TiO2:Ta) films were synthesized on MgAl6O10 substrates by the metal-organic chemical vapor deposition (MOCVD) method. The doping uniformities, crystallization qualities, and optical properties of the deposited films were systematically
Autor:
Hong Liu, Ye Tian, Yu Zhang, Jianfeng Jiang, Jiazhzhi Duan, Qiqiang Li, Lin Han, Xianjin Feng, Tian-Ling Ren, Yutao Li, Haotian Zheng, Jingxin Li, Linshen Li, Zhihua Zong
Publikováno v:
npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-8 (2019)
Among two-dimensional layered semiconductors, indium selenide (InSe) is one of the most promising materials with absolute advantages in field-effect transistors (FETs) because of its high electron mobility and stable material properties. Some work ha
Publikováno v:
Journal of Alloys and Compounds. 791:773-778
Indium-aluminum-zinc oxide (IAZO) films and thin film transistors (TFTs) were prepared at different substrate temperatures by RF magnetron sputtering. Both the unannealed and annealed IAZO films exhibited an amorphous state with very flat surface top
Publikováno v:
Ceramics International. 45:10196-10202
Epitaxial Ta-doped SnO2 films with Ta concentrations from 0 to 8 at.% have been deposited on MgF2 (110) substrates by the metal-organic chemical vapor deposition (MOCVD) method. The effects of Ta doping on the structural, photoelectrical and photolum