Zobrazeno 1 - 10
of 115
pro vyhledávání: '"Xianjin Feng"'
Publikováno v:
Ceramics International. 48:4312-4317
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d1d216190617e2a673bb70e6f6d3c61
https://doi.org/10.1016/j.ceramint.2021.10.225
https://doi.org/10.1016/j.ceramint.2021.10.225
Publikováno v:
Functional Materials Letters. 15
Cubic Zn2TiO4 films were deposited on MgO (111) single crystal substrates using pulsed laser deposition (PLD). With the assistance of post-annealing process, the best epitaxial Zn2TiO4 film with only (111) single plane was obtained at 950[Formula: se
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03fe4e4e54c942c612f6b3f1cb16d260
https://doi.org/10.1142/s1793604722510444
https://doi.org/10.1142/s1793604722510444
Publikováno v:
Ceramics International. 46:17295-17299
We had found for the first time that short-time UV-ozone treatment can effectively regulate the electrical properties of sputtered InAlZnO (IAZO) films, and we successfully prepared high performance IAZO thin film transistors (TFTs) without thermal a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa6aabbd19f310d88ed2e010a4d50f09
https://doi.org/10.1016/j.ceramint.2020.04.016
https://doi.org/10.1016/j.ceramint.2020.04.016
Autor:
Yu Zhang, Yuanhua Sang, Hong Liu, Lin Han, Xianjin Feng, Jianfeng Jiang, Aizhu Wang, Hao Ji, Jinbo Pang, Jiazhi Duan
Publikováno v:
ACS Applied Electronic Materials. 2:2132-2140
Electrical stability and field-effect mobility of two-dimensional (2D) material-based field-effect transistors (FETs) are extremely important for practical electronic applications. Interface scatte...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eaed1906250b6a430a7ca1334f1a8e0
https://doi.org/10.1021/acsaelm.0c00347
https://doi.org/10.1021/acsaelm.0c00347
Publikováno v:
Ceramics International. 46:4568-4572
Gallium oxide (Ga2O3) films have been deposited on SrTiO3 (100) substrates by using the metal-organic chemical vapor deposition (MOCVD) method. Post-deposition annealing was performed at different temperatures. XRD θ-2θ scans displayed that the ann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95e23f0813612937b7f6f975d71844b8
https://doi.org/10.1016/j.ceramint.2019.10.185
https://doi.org/10.1016/j.ceramint.2019.10.185
Publikováno v:
Journal of the American Ceramic Society. 103:2555-2561
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebbfce469e7971810714b996c0c148bc
https://doi.org/10.1111/jace.16943
https://doi.org/10.1111/jace.16943
Publikováno v:
IEEE Transactions on Electron Devices. 66:4193-4197
Ta-doped TiO2 (TiO2:Ta) films were synthesized on MgAl6O10 substrates by the metal-organic chemical vapor deposition (MOCVD) method. The doping uniformities, crystallization qualities, and optical properties of the deposited films were systematically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be161944a32a07e141f052d6a534f38b
https://doi.org/10.1109/ted.2019.2933476
https://doi.org/10.1109/ted.2019.2933476
Autor:
Hong Liu, Ye Tian, Yu Zhang, Jianfeng Jiang, Jiazhzhi Duan, Qiqiang Li, Lin Han, Xianjin Feng, Tian-Ling Ren, Yutao Li, Haotian Zheng, Jingxin Li, Linshen Li, Zhihua Zong
Publikováno v:
npj 2D Materials and Applications, Vol 3, Iss 1, Pp 1-8 (2019)
Among two-dimensional layered semiconductors, indium selenide (InSe) is one of the most promising materials with absolute advantages in field-effect transistors (FETs) because of its high electron mobility and stable material properties. Some work ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fadda561ebe6378d58973aaf017df4cd
http://link.springer.com/article/10.1038/s41699-019-0110-x
http://link.springer.com/article/10.1038/s41699-019-0110-x
Publikováno v:
Journal of Alloys and Compounds. 791:773-778
Indium-aluminum-zinc oxide (IAZO) films and thin film transistors (TFTs) were prepared at different substrate temperatures by RF magnetron sputtering. Both the unannealed and annealed IAZO films exhibited an amorphous state with very flat surface top
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::202dbac6866ed0feaaae29ad917719eb
https://doi.org/10.1016/j.jallcom.2019.03.245
https://doi.org/10.1016/j.jallcom.2019.03.245
Publikováno v:
Ceramics International. 45:10196-10202
Epitaxial Ta-doped SnO2 films with Ta concentrations from 0 to 8 at.% have been deposited on MgF2 (110) substrates by the metal-organic chemical vapor deposition (MOCVD) method. The effects of Ta doping on the structural, photoelectrical and photolum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a135c7c7cab2b9cfa7bad56b62cc992b
https://doi.org/10.1016/j.ceramint.2019.02.070
https://doi.org/10.1016/j.ceramint.2019.02.070