Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Xiangyi Guo"'
Autor:
Mengxin He, Lin-Xuan Xu, Chiang-shan R. Li, Zihan Liu, Jiaqi Hu, Xiangyi Guo, Hongyun Liu, Jin-Tao Zhang
Publikováno v:
Human factors.
Objective Do real-time strategy (RTS) video gamers have better attentional control? To examine this issue, we tested experienced versus inexperienced RTS video gamers on multi-object tracking tasks (MOT) and dual-MOT tasks with visual or auditory sec
Publikováno v:
Science of The Total Environment. 625:1659-1666
Blood lead (Pb) poisoning is a worldwide heath problem, especially in developing countries. As the largest developing country in the world, China faces severe health challenges, in particular the threat of blood Pb poisoning. In this study, the tempo
Autor:
Xiangyi Guo, Jianxin Cheng, Zhijuan Li, Yixin Wu, Huiyuan Zhou, Jingjing Mo, Yu Liu, Beibei Gao
Publikováno v:
Gene. 673
Background The roles of plasminogen activator inhibitor-1 (PAI-1) gene polymorphisms in atherosclerotic diseases were intensively analyzed, but the results of these studies were inconsistent. Therefore, we performed this study to better assess the re
Publikováno v:
Molecular Carcinogenesis. 54:1264-1274
Replacing mouse Cyp1a with human CYP1A enables the humanized CYP1A mice to mimic human metabolism of the dietary carcinogen, 2-amino-1-methyl-6-phenylimidazo[4,5-b]pyridine (PhIP), by N(2) -hydroxylation to a proximate carcinogen. Our previous study
Publikováno v:
IEEE Journal of Quantum Electronics. 43:1159-1162
We report 4H-SiC p-i-n avalanche photodiodes (APDs) with very low dark current. When biased for a photocurrent gain M of 1000, a 100-mum-diameter device exhibits dark current of 5 pA (63 nA/cm2), corresponding to primary multiplied dark current of 5
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 13:887-894
In0.53Ga0.47As/InP avalanche photodiodes with very low dark current have been characterized in gated mode for single-photon detection. A 40-mum-diameter single-photon avalanche diodes (SPAD) exhibited high single-photon detection efficiency (SPDE = 4
Autor:
Zhihong Huang, Mingguo Liu, Ariane L. Beck, Ning Kong, Joe C. Campbell, Sanjay K. Banerjee, Ning Duan, Xiangyi Guo
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 12:1450-1454
Backside-illuminated germanium photodiodes fabricated on silicon substrate with two Si xGe1-x buffer layers are reported. At 1.3 mum, the responsivity was 0.62 A/W for reverse bias greater than 0.1 V. The 3-dB bandwidth was 21.5 GHz at 10-V reverse b
Publikováno v:
ECS Transactions. 3:359-365
Ultraviolet detectors are becoming increasingly important in medical, military, and environmental applications, including biological agent detection and non-line-of-sight (NLOS) communications. SiC avalanche photodiodes (APDs) are an attractive candi
Autor:
Joe C. Campbell, Ariane L. Beck, J.J. Sumakeris, Ning Duan, Xiangyi Guo, D. Emerson, Zhihong Huang
Publikováno v:
IEEE Transactions on Electron Devices. 53:2259-2265
The authors report on the fabrication and performance of low-dark-current 4H-SiC avalanche photodiodes with a thin 180-nm-thick p - multiplication layer. At a photocurrent gain M of 1000, the dark current of a 100-mum-diameter device was 35 pA (0.44