Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Xiangxiang Fang"'
Autor:
Liyan Song, Gang Li, Wen Guan, Zhijun Zeng, Yanghui Ou, Tongchao Zhao, Jiayu Li, Dengqin He, Xiangxiang Fang, Yali Zhang, Jia-qiang Wu, Rongbiao Tong, Hongliang Yao
Publikováno v:
Biomedicine & Pharmacotherapy, Vol 166, Iss , Pp 115412- (2023)
Acute lung injury (ALI) is an inflammation-mediated respiratory disease with a high mortality rate. Medications with anti-inflammatory small molecules have been demonstrated in phase I and II clinical trials to considerably reduce the ALI mortality.
Externí odkaz:
https://doaj.org/article/6abb68ab47ec493fb11da83f3d5003c9
Autor:
Gang Li, Jia-Qiang Wu, Xiaojia Cai, Wen Guan, Zhijun Zeng, Yanghui Ou, Xiaoyun Wu, Jiayu Li, Xiangxiang Fang, Jinling Liu, Yali Zhang, Huamin Wang, Canqiang Yin, Hongliang Yao
Publikováno v:
European Journal of Medicinal Chemistry. 252:115284
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed226704069cd1a60b4c21b13db0d822
https://doi.org/10.1016/j.ejmech.2023.115284
https://doi.org/10.1016/j.ejmech.2023.115284
Publikováno v:
IEEE Transactions on Power Electronics. 35:9680-9689
Compared to silicon counterparts, silicon carbide (SiC) power mosfet s have lower on -state resistance and faster switching speed, which in turn makes them better candidates for high-voltage power switching applications. This creates a growing need t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e13b072a2da6b562e5bc2480be3b40d
https://doi.org/10.1109/tpel.2020.2972453
https://doi.org/10.1109/tpel.2020.2972453
Autor:
Yong Zeng, Chuang Yue, Xiangxiang Fang, Long Huang, Ziyang Hu, Jing Cuan, Zhian Zhao, Yuejin Zhu
Publikováno v:
Energy Technology. 11:2201177
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2143bbafa64a882027cf330445c7a3d
https://doi.org/10.1002/ente.202201177
https://doi.org/10.1002/ente.202201177
Autor:
Xiangxiang, Fang
SiC power MOSFETs are great candidates for high-voltage power switching applications because of their lower on-resistance and faster switching speed compared with silicon power MOSFETs. In this study, a TO-247 packaged, 1.2KV, 15A SiC MOSFET manufact
Externí odkaz:
http://rave.ohiolink.edu/etdc/view?acc_num=osu1354687371
