Zobrazeno 1 - 8 of 8 pro vyhledávání: '"Xianglie Sun"'
4
Thermal stability issue of ultrathin Ti-based silicide for its application in prospective DRAM peripheral 3D FinFET transistors
Autor: Xuebing Zhou, Chao Zhao, Tianchun Ye, Jing Xu, Dapeng Chen, Jianfeng Gao, Dan Zhang, Yongliang Li, Junfeng Li, Yaodong Liu, Jun Luo, Xianglie Sun, Jinbiao Liu, Wenwu Wang
Publikováno v: Journal of Materials Science: Materials in Electronics. 32:24107-24114
In this work, the thermal stability issue of ultrathin Ti-based silicide (TiSix) in prospective dynamic random access memory (DRAM) peripheral 3D FinFET transistors was systematically studied. As-prepared TiSix/n+-Si contacts and ultrathin TiSix film
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::61a895d6ddfad8a742231e0665bb3e13
https://doi.org/10.1007/s10854-021-06874-7
Zobrazit plný text záznamu
5
A Novel Method to Reduce Specific Contact Resistivity of TiSix/n+-Si Contacts by Employing an In-Situ Steam Generation Oxidation Prior to Ti Silicidation
Autor: Jun Luo, Yongliang Li, Xianglie Sun, Dapeng Chen, Jing Xu, Xuebing Zhou, Menghua Li, Jinbiao Liu, Junfeng Li, Wenwu Wang, Tianchun Ye, Dan Zhang, Yaodong Liu, Jianfeng Gao, Chao Zhao
Publikováno v: IEEE Electron Device Letters. 42:958-961
Due to extremely tight Contacted Poly Pitch (CPP) in sub-10 nm nodes, specific contact resistivity ( $\rho _{{\text {c}}}$ ) has become the main concern for further improvement of transistor performance. Both the reduction of Schottky barrier heights
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4deae4ba938c18cc2a096697c44a845a
https://doi.org/10.1109/led.2021.3081701
Zobrazit plný text záznamu
6
Formation of Highly-Activated N-Type Shallow Junction in Germanium Using Nanosecond Laser Annealing and Fluorine Co-Doping
Autor: Jinbiao Liu, Jing Xu, Hengwei Cui, Xianglie Sun, Shujuan Mao, Yuanhao Miao, Jiahan Yu, Jianghao Han, ZhenZhen Kong, Tao Yang, Junfeng Li, Jun Luo
Publikováno v: ECS Journal of Solid State Science and Technology. 12:054002
By employing a 355-nm nanosecond (ns) ultraviolet (UV) laser annealing, the impact of fluorine (F) co-doping on the formation of a highly activated N-type shallow junction in germanium (Ge) is investigated. Secondary ion mass spectrometry (SIMS) dept
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b1724975181b88ca7b35c68228e15430
https://doi.org/10.1149/2162-8777/acd721
Zobrazit plný text záznamu
8
Influence of TaN films deposited using different N2 flow rates on the properties of Ta and Cu films in advanced 3D NAND memory
Autor: Shuliang Lv, Yuan Li, Huang Chi, Xianglie Sun, Haodong Ma, Jun Luo
Publikováno v: Materials Science in Semiconductor Processing. 115:105120
In this work, the properties of Ta and Cu films on TaN films deposited using different N2 flow rates were explored. The phase identification of Ta, sheet resistance (Rsh) of Ta/TaN stacking films, as well as the N contents within TaN films were chara
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::896ceb6ec444aecf482d45b403f363e4
https://doi.org/10.1016/j.mssp.2020.105120
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje