Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Xiangjun Shang"'
Publikováno v:
Crystals, Vol 13, Iss 10, p 1417 (2023)
InAlAs:Be/InGaAs superlattices grown at low temperatures were investigated in this study. To obtain the highest resistivity and mobility simultaneously, a growth temperature above 200 °C was applied. The electrical properties were conducted via Hall
Externí odkaz:
https://doaj.org/article/e20f9b0281a14ea0acbcd2923d9553fc
Autor:
Xiangjun Shang, Xiangbin Su, Hanqing Liu, Huiming Hao, Shulun Li, Deyan Dai, Mifeng Li, Ying Yu, Yu Zhang, Guowei Wang, Yingqiang Xu, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Nanomaterials, Vol 13, Iss 13, p 1959 (2023)
In this work, we developed pre-grown annealing to form β2 reconstruction sites among β or α (2 × 4) reconstruction phase to promote nucleation for high-density, size/wafer-uniform, photoluminescence (PL)-optimal InAs quantum dot (QD) growth on a
Externí odkaz:
https://doaj.org/article/31890a676dfe4906aab21730ca659994
Autor:
Shulun Li, Yao Chen, Xiangjun Shang, Ying Yu, Jiawei Yang, Junhui Huang, Xiangbin Su, Jiaxin Shen, Baoquan Sun, Haiqiao Ni, Xingliang Su, Kaiyou Wang, Zhichuan Niu
Publikováno v:
Nanoscale Research Letters, Vol 15, Iss 1, Pp 1-7 (2020)
Abstract We proposed a precise calibration process of Al 0.9 Ga 0.1As/GaAs DBR micropillar cavity to match the single InAs/GaAs quantum dot (QD) exciton emission and achieve cavity mode resonance and a great enhancement of QD photoluminescence (PL) i
Externí odkaz:
https://doaj.org/article/95adb39333894069bf9271693fc2e0b8
Autor:
Xiangjun Shang, Hanqing Liu, Xiangbin Su, Shulun Li, Huiming Hao, Deyan Dai, Zesheng Chen, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Crystals, Vol 12, Iss 8, p 1116 (2022)
In this work, we measure polarization-resolved photoluminescence spectra from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) at the telecom O-band with strain-coupled bilayer structure. QDs often show fine-structure splitting (FSS
Externí odkaz:
https://doaj.org/article/1d2c5bff25904393ac8fa144e4b6556e
Autor:
Xiangjun Shang, Shulun Li, Hanqing Liu, Xiangbin Su, Huiming Hao, Deyan Dai, Xiaoming Li, Yuanyuan Li, Yuanfei Gao, Xiuming Dou, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Nanomaterials, Vol 12, Iss 7, p 1219 (2022)
In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light e
Externí odkaz:
https://doaj.org/article/e9dc848ea06d490fb4743f5a914103f8
Autor:
Xiangjun Shang, Ben Ma, Haiqiao Ni, Zesheng Chen, Shulun Li, Yao Chen, Xiaowu He, Xingliang Su, Yujun Shi, Zhichuan Niu
Publikováno v:
AIP Advances, Vol 10, Iss 8, Pp 085126-085126-5 (2020)
InAs/GaAs quantum dots (QDs) grown on a GaAs (001) substrate were studied by photoluminescence spectroscopy. Both C2v and D3h QDs with featured XX11, X11+, and XX21+ spectra have been found. A local defect field tunes the dominant exciton from X+ to
Externí odkaz:
https://doaj.org/article/ee392ed1b49a4d6bbb83455c01072d3f
Autor:
Xiangjun Shang, Shulun Li, Hanqing Liu, Ben Ma, Xiangbin Su, Yao Chen, Jiaxin Shen, Huiming Hao, Bing Liu, Xiuming Dou, Yang Ji, Baoquan Sun, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Crystals, Vol 11, Iss 10, p 1194 (2021)
The sacrificed-QD-layer method can well control the indium deposition amount to grow InAs quantum dots (QDs) with isotropic geometry. Individual Si dopant above an (001)-based InAs QD proves a new method to build a local electric field to reduce fine
Externí odkaz:
https://doaj.org/article/cef596c0f70d477ea2d8a853057f9610
Autor:
Shulun Li, Xiangjun Shang, Yao Chen, Xiangbin Su, Huiming Hao, Hanqing Liu, Yu Zhang, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Nanomaterials, Vol 11, Iss 5, p 1136 (2021)
Uniform arrays of three shapes (gauss, hat, and peak) of GaAs microlenses (MLs) by wet-etching are demonstrated, ∼200 nm spatial isolation of epitaxial single QDs embedded (λ: 890–990 nm) and broadband (Δλ∼80 nm) enhancement of their quantum
Externí odkaz:
https://doaj.org/article/7f381993db3b4aed8f14c3d9a0002349
Autor:
Niu, Xiangjun Shang, Xiangbin Su, Hanqing Liu, Huiming Hao, Shulun Li, Deyan Dai, Mifeng Li, Ying Yu, Yu Zhang, Guowei Wang, Yingqiang Xu, Haiqiao Ni, Zhichuan
Publikováno v:
Nanomaterials; Volume 13; Issue 13; Pages: 1959
In this work, we developed pre-grown annealing to form β2 reconstruction sites among β or α (2 × 4) reconstruction phase to promote nucleation for high-density, size/wafer-uniform, photoluminescence (PL)-optimal InAs quantum dot (QD) growth on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::916fe4f992c0b5a17747523d13c078ad
Autor:
Xiangbin Su, Chengao Yang, Hanquin Liu, Xiangjun Shang, Shulun Li, Yu Zhang, Haiqiao Ni, Yingqiang Xu, Zhichuan Niu
Publikováno v:
Thirteenth International Conference on Information Optics and Photonics (CIOP 2022).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04a143ae7780f99489f81365a0a82193
https://doi.org/10.1117/12.2654820
https://doi.org/10.1117/12.2654820