Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Xiangfu Zong"'
Electrochemical studies of substituted spinel LiAl yMn 2− yO 4− zF z for lithium secondary batteries
Publikováno v:
In Journal of Fluorine Chemistry 2001 107(1):39-44
Publikováno v:
Philosophical Magazine B. 82:1847-1857
Some Y3+-doped PbWO4 (PWO:Y3+) crystals grown by the modified Bridgman method showed exceptional behaviours, namely the increase in the light yield after low-dose-rate irradiation and also the improvement in the optical transmission at around 430 nm.
Publikováno v:
Japanese Journal of Applied Physics. 41:6525-6528
Thermal diffusion of copper in a Cu/TaN/Si-sub sample was investigated after annealing at 630°C for 60 min. The interface morphology, copper silicide grains and SiO2 thin layer were observed using high resolution transmission electron microscope (HR
Publikováno v:
Soldering & Surface Mount Technology. 12:37-41
The impact of underfill properties on the thermomechanical reliability of flip chip on board (FCOB) assembly is addressed in this paper. FCOB assemblies using three underfill encapsulants were subjected to a thermal cycling test. The performance of t
Publikováno v:
26th International Spring Seminar on Electronics Technology: Integrated Management of Electronic Materials Production, 2003..
The Department of Electrical & Computer Engineering (ECE) at Portland State University (PSU) has begun to deliver ECE courses to students in Shanghai, China at the International Institute for Information, Science, & Technology (IIIST) in an innovativ
Publikováno v:
Chinese Physics Letters. 11:390-392
Scanning tunneling microscopy was used to observe the morphological feature of luminescent porous Si. Results show that the surface of porous Si consists of randomly distributed nano-sized Si grains, which may be Si clusters. No clear interface was f
Publikováno v:
IEEE Conference Record - Abstracts. 1996 IEEE International Conference on Plasma Science.
Summary form only given, as follows. The gettering of some common impurities such as Fe, Cu, Al and Na in silicon wafers from low energy and high dose hydrogen ion implantation was studied. It is found that PIII is an effective and economic technique
Publikováno v:
Chinese Physics Letters. 10:18-20
Concentration of Si-H2 bond in porous silicon layer (PSL) affects its photoluminescence (PL) intensity and peak wavelength PL emission characters of PSL associate with not only its micro-structure, but also the Si-H2 band. So a stabilization of the e
Publikováno v:
AIP Conference Proceedings.
Today’s smaller geometry devices increasingly require the improved spatial resolution afforded by the transmission electron microscope (TEM) both in imaging analysis and in elemental analysis. The difficulties in sample preparation for TEM analysis
Autor:
Wen-Qing Yang, Dequan Yue, F. T. Chan, Wei Luo, Ning Huang, Gregory J. Salamo, Yongan Tang, Xiangfu Zong, Huan Sheng Cheng, Z.Z. Sheng
Publikováno v:
SPIE Proceedings.
Superconducting Tl-Ba-Ca-Cu-O thin films have been fabricated by laser ablation. There are two steps in this process. First, an excimer laser is focused onto the Ba-Ca-Cu-O target forming a Ba-Ca-Cu-O plume. These particles are then deposited on subs