Zobrazeno 1 - 10
of 360
pro vyhledávání: '"Xiangang Xu"'
Autor:
Xinyu Wang, Ming Li, Fanpeng Zeng, Bin Zhang, Lei Ge, Yingxin Cui, Mingsheng Xu, Yu Zhong, Kuan Yew Cheong, Xiaobo Hu, Xiangang Xu, Jisheng Han
Publikováno v:
Results in Physics, Vol 62, Iss , Pp 107799- (2024)
This paper presents a structure for designing Junction Termination Extension (JTE) in Silicon Carbide (SiC) power devices, particularly for Schottky Barrier Diodes (SBD). The P-type island composite multi-step JTE configuration has been developed by
Externí odkaz:
https://doaj.org/article/4e042c12f26d4762953a11bc7ce8cf73
Autor:
Xiufang Chen, Xianglong Yang, Xuejian Xie, Yan Peng, Longfei Xiao, Chen Shao, Huadong Li, Xiaobo Hu, Xiangang Xu
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-8 (2023)
The crystal growth, defects control, electrical property and corresponding device authentication of N-type, P-type and semi-insulating silicon carbide crystals in Shandong University are introduced.
Externí odkaz:
https://doaj.org/article/b02002e0959a4c82b83e23fb06533262
Autor:
Songyang Lv, Shouzhi Wang, Lili Li, Shoutian Xie, Jiaoxian Yu, Yueyao Zhong, Guodong Wang, Chang Liang, Xiangang Xu, Lei Zhang
Publikováno v:
Advanced Science, Vol 10, Iss 15, Pp n/a-n/a (2023)
Abstract Gallium nitride (GaN) single crystal, as the representative of wide‐band semiconductors, has great prospects for high‐temperature energy storage, of its splendid power output, robust temperature stability, and superior carrier mobility.
Externí odkaz:
https://doaj.org/article/0071c168737a435485d093ba1f60ece7
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-2 (2023)
Externí odkaz:
https://doaj.org/article/820d2044a8a34dacab6bb0529a69cb27
Autor:
Guo Li, Mingsheng Xu, Dongyang Zou, Yingxin Cui, Yu Zhong, Peng Cui, Kuan Yew Cheong, Jinbao Xia, Hongkun Nie, Shuqiang Li, Handoko Linewih, Baitao Zhang, Xiangang Xu, Jisheng Han
Publikováno v:
Crystals, Vol 13, Iss 7, p 1106 (2023)
In recent years, because of stringent needs in the fabrication of silicon carbide (SiC) power devices, laser annealing has been introduced to achieve local ohmic contact. In this paper, the laser annealing research for the ohmic contact process of Si
Externí odkaz:
https://doaj.org/article/0d6ecc4af7964eeba364a9365d05b602
Autor:
Peng Liu, Wanggen Sun, Xiao Sun, Zhen Zhu, Huabing Qin, Jian Su, Chengcheng Liu, Wenjing Tang, Kai Jiang, Wei Xia, Xiangang Xu
Publikováno v:
Photonics, Vol 10, Iss 6, p 619 (2023)
The pumping of Tm-doped crystal or fiber by a 792 nm semiconductor laser is an important way to generate a mid-infrared laser, which is widely used in various fields. In this paper, a high–power 792 nm fiber–coupled semiconductor laser module was
Externí odkaz:
https://doaj.org/article/5aa423f36ca14755b6b4bfbacdc36c09
Publikováno v:
Frontiers in Materials, Vol 9 (2022)
Graphene has excellent properties such as ultra-high electrical conductivity, high carrier mobility, and thermal conductivity, with a promising application in the field of triboelectric nanogenerators (TENGs). We present a systemic investigation to e
Externí odkaz:
https://doaj.org/article/c36f2579de4b4d4bb13e7535b73404dc
Autor:
Xiao Sun, Peng Liu, Xiangen Ma, Xiaodong Zhang, Jian Su, Kang Chen, Qi Liu, Kai Jiang, Wenjing Tang, Wei Xia, Xiangang Xu
Publikováno v:
Photonics, Vol 10, Iss 3, p 302 (2023)
Traditional laser diodes operating at 650 nm are more prone to high-order mode excitation, resulting in poorer beam quality. In this paper, we designed GaInP–AlGaInP laser diodes (LD) with a 650 nm range and a trench mode-modulation structure based
Externí odkaz:
https://doaj.org/article/da23f1587f5946e2904a09e274e7eb7b
Autor:
Yingnan Wang, Xiufei Hu, Lei Ge, Zonghao Liu, Mingsheng Xu, Yan Peng, Bin Li, Yiqiu Yang, Shuqiang Li, Xuejian Xie, Xiwei Wang, Xiangang Xu, Xiaobo Hu
Publikováno v:
Crystals, Vol 13, Iss 3, p 500 (2023)
With the increased power density of gallium nitride (GaN) high electron mobility transistors (HEMTs), effective cooling is required to eliminate the self-heating effect. Incorporating diamond into GaN HEMT is an alternative way to dissipate the heat
Externí odkaz:
https://doaj.org/article/3ec5fe4949e7419ca53e36702a664a1a
Publikováno v:
FEBS Open Bio, Vol 9, Iss 10, Pp 1784-1797 (2019)
Accumulating evidence has demonstrated that the aberrant expression of microRNAs (miRs or miRNAs) may contribute to the initiation and progression of various types of human cancer and may also constitute biomarkers for cancer diagnosis and therapy. H
Externí odkaz:
https://doaj.org/article/e6bb461ef9724db2bb42f782aee0f237