Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Xiang-Ning Kang"'
Publikováno v:
IEEE Photonics Journal, Vol 6, Iss 3, Pp 1-10 (2014)
This study reveals the effect of nanoscale ITO transmission gratings on light emission from the top, sides, and bottom of a GaN light-emitting diode (LED), based on the substrate standing wave analysis. First, we show that sapphire substrate thicknes
Externí odkaz:
https://doaj.org/article/79b721a726b1482d87334cdf14f9edf1
Autor:
X. Q. Wang, Ning Zhang, Weikun Ge, Xiang Ning Kang, Xiaoyang Yang, Jing Lang, J. Wang, X. Z. Fang, Zelian Qin, Fujun Xu, Luojia Wang, Bing Shen, Baodong Liu
Publikováno v:
Applied Physics Letters. 118:222101
Improving the contact characteristics of Ti/Al/Ni/Au on plasma etched n-AlGaN has been attempted by an active pretreatment, which can provide Si and N atoms to occupy the possible metal and N vacancies. It is found that the contacts on both the as-gr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8cbab1abcbcf5dd38682d1b3e00858bf
https://doi.org/10.1063/5.0042621
https://doi.org/10.1063/5.0042621
Autor:
Qianqian Jiao, G. Y. Zhang, Z. Z. Chen, Fei Jiao, Chong Li, Xiang Ning Kang, S.Y. Wang, Bing Shen, Jinglin Zhan, Yuebin Tao
Publikováno v:
2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).
In this work, we have fabricated the different diameter micro pillar $\mu$ LEDs with different wavelength and on different substrates. The electroluminescence (EL) spectra and current-voltage (I-V) curves were measured. The high saturate current dens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f314ef1ab2b78c6338d96e820af2ef1a
https://doi.org/10.1109/ifws.2018.8587362
https://doi.org/10.1109/ifws.2018.8587362
Publikováno v:
Advanced Materials Research. 571:476-481
This paper focuses on the optical mode analysis of laser diodes to improve light emission. Under the mode analysis, we compare the optical confinement factor (OCF) percentage of the emitting light from the LDs. There are two structures which we analy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8983efa2dfd239136927b413267cc44d
https://doi.org/10.4028/www.scientific.net/amr.571.476
https://doi.org/10.4028/www.scientific.net/amr.571.476
Autor:
Bei Zhang, Kui Bao, Xiang Ning Kang, Dong Sheng Xu, Wen Zhu Zhao, Tao Dai, Zi Zhao Gan, G. Y. Zhang
Publikováno v:
IEEE Photonics Technology Letters. 20:1974-1976
An improvement of light extraction from GaN-based light-emitting diodes (LEDs) was demonstrated by forming surface nano-structures using an anodic aluminum oxide (AAO) template as a dry etching mask. Nano-pores were simultaneously formed on indium ti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee657fe4411130c00df1b0e62c9081f8
https://doi.org/10.1109/lpt.2008.2005645
https://doi.org/10.1109/lpt.2008.2005645
Publikováno v:
IEEE Photonics Technology Letters. 19:1840-1842
To improve surface light extraction of GaN-based flip-chip light-emitting diodes (FC-LEDs), we employed an imprint approach of thermosetting polymer for patterning microscale surface grating on the polymer encapsulant. One-dimensional (1-D) and two-d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec92f377d340a50dc0711eb31eab29a
https://doi.org/10.1109/lpt.2007.908731
https://doi.org/10.1109/lpt.2007.908731
Publikováno v:
Journal of Crystal Growth. 298:703-705
The n-type GaN layers of high power blue light-emitting diodes (LEDs) were roughened successfully and formed a “cone-like” surface by photo-enhanced chemical (PEC) etching method. As a result, the extraction efficiency of the surface roughened LE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::634221d9b128988780866f3ae5992e5a
https://doi.org/10.1016/j.jcrysgro.2006.10.124
https://doi.org/10.1016/j.jcrysgro.2006.10.124
Autor:
Xiang Ning Kang, Shaoen Jiang, Sibai Li, Z. Z. Chen, Yuxia Feng, Ji Li, G. Y. Zhang, Yuanxiang Chen, Bo Shen, Qianqian Jiao, Shuailong Zhang, Erdan Gu, Tongjun Yu
Publikováno v:
Applied Physics Letters. 110:052103
In this work, we report on the fabrication of “golftee,” “castle,” and “pillar” shaped InGaN/GaN nanorod light-emitting diode (LED) arrays with a typical rod diameter of 200 nm based on nanoimprint lithography, dry etching, and wet etchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65e0c78388a256378c6ecf17705fdc4f
https://doi.org/10.1063/1.4975203
https://doi.org/10.1063/1.4975203
Publikováno v:
Proceedings of SPIE; Nov2014, p1-9, 9p
Publikováno v:
Chinese Physics B. 20:067303
Thin tungsten nitride (WNx) films were produced by reactive DC magnetron sputtering of tungsten in an Ar—N2 gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviours of WNx contact was investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff922e61d978df7964296e58beb595f3
https://doi.org/10.1088/1674-1056/20/6/067303
https://doi.org/10.1088/1674-1056/20/6/067303