Výsledky vyhledávání - "Xiang-Jing Zhuo"

Effect of Mg Doping in GaN Interlayer on the Performance of Green Light-Emitting Diodes

Autor: Shuti Li, Dan-Wei Li, Yuan-Wen Zhang, Lei Yu, Jia-Sheng Diao, Xingfu Wang, Xiang-Jing Zhuo, Jun Zhang, Kai Li

Publikováno v: IEEE Photonics Technology Letters. 27:117-120

A light-emitting diode (LED) structure containing a low-temperature (LT) GaN interlayer between active region and AlGaN electron blocking layer is proposed to improve the performance of InGaN-based green LEDs. The experimental and simulated results s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bfd5bcd2d070c4dc8bb93b7443cbdd34
https://doi.org/10.1109/lpt.2014.2362939

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High quality crack-free GaN film grown on si (1 1 1) substrate without AlN interlayer

Autor: Miao He, Chao Liu, Jun Zhang, Kai Li, Xiang-Jing Zhuo, Shuti Li, Dan-Wei Li, Lei Yu, Jia-Sheng Diao, Yuan-Wen Zhang, Bijun Zhao, Xingfu Wang

Publikováno v: Journal of Crystal Growth. 407:58-62

High quality crack-free GaN film has been grown on 2 in. n-type Si (1 1 1) substrate without AlN interlayers by metalorganic chemical vapor deposition (MOCVD). By using a two-step-pressure growth technique for the AlN buffer layer, we have obtained c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e57e60330d69a856c7d1d80fae1e191a
https://doi.org/10.1016/j.jcrysgro.2014.08.025

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Efficiency-droop reduction in blue InGaN light-emitting diodes with low temperature p-type insertion layer

Autor: Xin Chen, Han-Xiang Yi, Xingfu Wang, Dan-Wei Li, Zhiwei Ren, Xiang-Jing Zhuo, Bijun Zhao, Shuti Li, Jun Zhang, Jinhui Tong

Publikováno v: Superlattices and Microstructures. 73:145-151

GaN based light emitting diodes with specially designed low temperature (LT) transition layers are investigated. Theoretical simulation shows that the LT-pGaN with LT-InGaN/GaN superlattice composite transition layer structure can effectively allevia

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ab34c0d9f5e0bdd36d69f1ba5045990a
https://doi.org/10.1016/j.spmi.2014.05.017

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Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

Autor: Dan-Wei Li, Jun Zhang, Xingfu Wang, Xiang-Jing Zhuo, Wei-Li Wang, Bijun Zhao, Xin Chen, Shuti Li, Jinhui Tong, Han-Xiang Yi, Zhiwei Ren

Publikováno v: Journal of Materials Science: Materials in Electronics. 25:4200-4205

The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7d7ec3be00fafd08bd9fbf9c814a4114
https://doi.org/10.1007/s10854-014-2149-y

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Enhanced performances of InGaN/GaN-based blue LED with an ultra-thin inserting layer between GaN barriers and InGaN wells

Autor: Jia-Sheng Diao, Xingfu Wang, Wei-Li Wang, Jun Zhang, Dan-Wei Li, Xiang-Jing Zhuo, Shuti Li, Yuan-Wen Zhang, Lei Yu, Kai Li

Publikováno v: Optics Communications. 325:129-133

The advantages of ultra-thin inserting layer (UTL) on the performances of InGaN/GaN-based blue light-emitting diode (LED) are investigated both experimentally and numerically. The fabricated LED with UTL exhibits smaller emission energy shift, lower

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::009663330d6dbf1ab1200c2a89ed7a9b
https://doi.org/10.1016/j.optcom.2014.04.018

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Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

Autor: Fang Fang, Shuti Li, Jinhui Tong, Han-Xiang Yi, Chao Liu, Dan-Wei Li, Xin Chen, Jun Zhang, Xingfu Wang, Zhiwei Ren, Bijun Zhao, Xiang-Jing Zhuo

Publikováno v: Chem. Commun.. 50:682-684

Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8817df63ff6ba7c316f1f84137a17f90
https://doi.org/10.1039/c3cc47239f

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Enhanced performance of InGaN/GaN based solar cells with an In(0.05)Ga(0.95)N ultra-thin inserting layer between GaN barrier and In(0.2)Ga(0.8)N well

Autor: Xinfu Wang, Liu Chao, Xin Chen, Xiang-Jing Zhuo, Dan-Wei Li, Bijun Zhao, Jun Zhang, Zhiwei Ren, Han-Xiang Yi, Shuti Li, Jinhui Tong

Publikováno v: Optics express. 21(6)

The effect of ultra-thin inserting layer (UIL) on the photovoltaic performances of InGaN/GaN solar cells is investigated. With UIL implemented, the open-circuit voltage was increased from 1.4 V to 1.7 V, short-circuit current density was increased by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52d0f34bad6f484e4b8b7e827f716721
https://pubmed.ncbi.nlm.nih.gov/23546093

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