Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Xiang-Bin Su"'
Autor:
Xiang-Bin Su, Ying Ding, Ben Ma, Ke-Lu Zhang, Ze-Sheng Chen, Jing-Lun Li, Xiao-Ran Cui, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-6 (2018)
Abstract The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot la
Externí odkaz:
https://doaj.org/article/fe7c372d63104f22a983cdd056c5a376
Autor:
Xiang-Bin Su, Fu-Hui Shao, Hui-Ming Hao, Liu-Han Qing, Shu-Lun Li, De-Yan Dai, Xiang-Jun Shang, Tian-Fang Wang, null Yu-Zhang, Cheng-Ao Yang, Ying-Qiang Xu, Hai-Qiao Ni, Ying Ding, Niu Zhi-Chuan
Publikováno v:
Chinese Physics B.
Here we report the 1.3-μm electrical injection lasers based on the InAs/GaAs quantum dot (QD) grown on GaAs substrate, which can steadily work at 110℃ without visible degradation. The QD structure is designed by applying the Stranski-Krastanow gro
Publikováno v:
Proceedings of SPIE; 8/21/2019, Vol. 11170, p1-4, 4p
Autor:
Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Hui-ming Hao, Ying-Qiang Xu, Hai-Qiao Ni, Yu Zhang, Zhi-Chuan Niu
Publikováno v:
Proceedings of SPIE; 4/24/2019, Vol. 11051, p1-6, 6p
Autor:
Fu-Hui Shao, Yi Zhang, Xiang-Bin Su, Sheng-Wen Xie, Jin-Ming Shang, Yun-Hao Zhao, Chen-Yuan Cai, Ren-Chao Che, Ying-Qiang Xu, Hai-Qiao Ni, Zhi-Chuan Niu
Publikováno v:
Chinese Physics B; Dec2018, Vol. 27 Issue 12, p1-1, 1p