Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Xiang Fu Zhao"'
Publikováno v:
2017 China Semiconductor Technology International Conference (CSTIC).
The Root Mean Square current (Irms) has been explored on both N doped un-silicided poly and silicided poly at 40nm technology node. It is found that poly resistance-current (RI) curves show an initially high resistance due to Schottky Rectifying cont
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8df099bfd5c1b3d11f3404ba9548dd39
https://doi.org/10.1109/cstic.2017.7919849
https://doi.org/10.1109/cstic.2017.7919849
Publikováno v:
ECS Transactions. 60:933-937
Via impact on the upstream electromigration (EM) of low-k Cu interconnects was investigated based on 40/45nm technology node. It is found that via height is the main factor to affect EM performance. Increasing via height can lead to more early failur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a72fbca4a2383af3af9a7e4a7e0a917
https://doi.org/10.1149/06001.0933ecst
https://doi.org/10.1149/06001.0933ecst
Publikováno v:
Advanced Materials Research. :7220-7223
Electrical conductivity of silicon nanomembranes (SiNMs) was measured by van der Pauw method under two surface modifications: hydrofluoric acid (HF) treatment and vacuum-hydrogenated(VH) treatment, which create hydrogen-terminated surface; and one in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a7272833ac4af17949c4acfd1260e17
https://doi.org/10.4028/www.scientific.net/amr.383-390.7220
https://doi.org/10.4028/www.scientific.net/amr.383-390.7220
Autor:
F. Yu, Li Hong Cheng, Hong Zhao, Youdou Zheng, L. Yu, Xiang Qian Xiu, Z.Z. Lu, Zi Li Xie, Rui Zhang, Xiang Fu Zhao, Ping Han
Publikováno v:
Advanced Materials Research. :1568-1572
The Ge mole fraction (x) of Si1-xGexlayer was described by the C-V technique for Schottkey contact of single heterojunction Si1-xGex/Si, whose structure profile can be characterized by SEM image and EDS. Then the strained Si cap layer was grown on th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::184f5c20b0a2147cd212c4818b9dfc65
https://doi.org/10.4028/www.scientific.net/amr.295-297.1568
https://doi.org/10.4028/www.scientific.net/amr.295-297.1568
Autor:
Cui-Hong Liu, Xiang-Fu Zhao
Publikováno v:
International Journal of Modern Physics B. 21:2989-3000
The scattering intensity (SI) for an electron resonant Raman scattering (ERRS) process in a free-standing semiconductor quantum wire of cylindrical geometry associated with bulk longitudinal optical (LO) phonon modes or the surface optical (SO) phono
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c700fea6925b2db7abf4dc4cee61079e
https://doi.org/10.1142/s0217979207037466
https://doi.org/10.1142/s0217979207037466
Autor:
Cui-Hong Liu, Xiang-Fu Zhao
Publikováno v:
Physics Letters A. 364:70-75
The scattering intensity (SI) of a free-standing cylindrical semiconductor quantum wire for an electron resonant Raman scattering (ERRS) process associated with bulk longitudinal optical (LO) phonon modes and surface optical (SO) phonon modes is calc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e2599cac43a8998a09ac50635fb7810
https://doi.org/10.1016/j.physleta.2006.12.070
https://doi.org/10.1016/j.physleta.2006.12.070
Autor:
Cui-Hong Liu, Xiang-Fu Zhao
Publikováno v:
Physica B: Condensed Matter. 392:11-15
Electron Raman scattering (ERS) is investigated in a semiconductor quantum well wire (QWW) of cylindrical geometry for T = 0 K and neglecting phonon-assisted transitions. The differential cross-section (DCS) involved in this process is calculated as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46773f91087d2f9c50553139cb1b1685
https://doi.org/10.1016/j.physb.2006.10.027
https://doi.org/10.1016/j.physb.2006.10.027
Autor:
Xiang-Fu Zhao, Cui-Hong Liu
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 36:34-39
The scattering intensity (SI) for an electron resonant Raman scattering (ERRS) process associated with bulk longitudinal optical (LO) phonon modes and surface optical (SO) phonon modes is calculated separately for T = 0 K in a free-standing semicondu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec6e37d8619524d954aa65283b0aec6
https://doi.org/10.1016/j.physe.2006.07.045
https://doi.org/10.1016/j.physe.2006.07.045
Publikováno v:
Thin Solid Films. 520:2001-2003
Electrical conductivity of 28 and 220-nm thick silicon membranes was measured by the van der Pauw method in dry air (relative humidity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a20eb27aba780a4d88daa400a85ccd4
https://doi.org/10.1016/j.tsf.2011.09.051
https://doi.org/10.1016/j.tsf.2011.09.051
Publikováno v:
Zhongguo shi yan xue ye xue za zhi. 12(5)
To explore the mechanism of transforming growth factor-beta1 (TGF-beta1) effect on umbilical cord blood mononuclear cells proliferation and apoptosis, 5-bromo-2'-deoxyurine (BrdU) incorporation assay was adopted to detect effect of TGF-beta1 on synth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::621976dfe37dcc6633f7fe38f749096b
https://pubmed.ncbi.nlm.nih.gov/15498127
https://pubmed.ncbi.nlm.nih.gov/15498127